3.0SMCJ SERIES
3000 Watts Surface Mount
Transient Voltage Suppressor
SMC/DO-214AB
.124(3.15)
.112(2.85)
.245(6.22)
.220(5.59)
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
from 0 volt to BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
o
C / 10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0
3000 watts peak pulse power capability with a
10 X 1000 us waveform by 0.01% duty cycle
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
.008(.20)
.071(1.8)
.039(1.0)
.320(8.13)
.305(7.75)
.004(.10)
Dimensions in inches and (millimeters)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated lead free,
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA STD
RS-481)
Weight: 0.21gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Type Number
o
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms (
N
ote 1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
I
FSM
200
Amps
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at 100.0A for
V
F
3.5 / 5.0
Volts
Unidirectional Only (Note 4)
o
Operating and Storage Temperature Range
T
J
, T
STG
-55 to + 150
C
Notes:
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25
O
C Per Fig. 2.
2. Mounted on 8.0mm
2
(.013mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute
Maximum.
4. V
F
=3.5V on 3.0SMCJ5.0 thru 3.0SMCJ90 Devices and V
F
=5.0V on 3.0SMCJ100 thr 3.0SMCJ170
Devices.
Symbol
P
PK
Pd
Value
Minimum 3000
5
Units
Watts
Watts
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types 3.0SMCJ5.0 through Types 3.0SMCJ170.
2. Electrical Characteristics Apply in Both Directions.
- 534 -
Version: A06
RATINGS AND CHARACTERISTIC CURVES (3.0SMCJ SERIES)
FIG.1- PEAK PULSE POWER RATING CURVE
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25
0
C
FIG.2- PULSE DERATING CURVE
PEAK PULSE POWER (Pppm) or CURRENT (lpp)
DERATING IN PERCENTAGE, %
100
100
Pppm, PEAK PULSE POWER, KW
75
10
50
1
25
0.31X0.31" (8.0X8.0mm) COPPER PAD AREAS
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
O
150
175
200
td. PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE. C
FIG.3- CLAMPING POWER PULSE WAVEFORM
150
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT. (A)
lppm, PEAK PULSE CURRENT % IRSM
PULSE WIDTH (td) is DEFINED
tr=10 sec.
AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
100
100
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
PEAK VALUE
lppm
HALF VALUE- lpp
2
50
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
0
0
td
1.0
2.0
t, TIME, ms
3.0
4.0
10
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
10000
UNIDIRECTIONAL
BIDIRECTIONA
CJ, JUNCTION CAPACITANCE. (pF)
V
R
=0
1000
100
Tj = 25 C
f=1.0MHz
Vsig=50mVp-p
V
R
-RATED
STAND-OFF
VOLTAGE
O
10
1
10
100
200
V(BR), BREAKDOWN VOLTAGE. VOLTS
- 535 -
Version: A06
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device Type
Modified
"J" Bend Lead
3.0SMCJ45
3.0SMCJ45A
3.0SMCJ48
3.0SMCJ48A
3.0SMCJ51
3.0SMCJ51A
3.0SMCJ54
3.0SMCJ54A
3.0SMCJ58
3.0SMCJ58A
3.0SMCJ60
3.0SMCJ60A
3.0SMCJ64
3.0SMCJ64A
3.0SMCJ70
3.0SMCJ70A
3.0SMCJ75
3.0SMCJ75A
3.0SMCJ78
3.0SMCJ78A
3.0SMCJ85
3.0SMCJ85A
3.0SMCJ90
3.0SMCJ90A
3.0SMCJ100
3.0SMCJ100A
3.0SMCJ110
3.0SMCJ110A
3.0SMCJ120
3.0SMCJ120A
3.0SMCJ130
3.0SMCJ130A
3.0SMCJ150
3.0SMCJ150A
3.0SMCJ160
3.0SMCJ160A
3.0SMCJ170
3.0SMCJ170A
Device
Marking
Code
HFU
HFV
HFW
HFX
HFY
HFZ
HGD
HGE
HGF
HGG
HGH
HGK
HGL
HGM
HGN
HGP
HGQ
HGR
HGS
HGT
HGU
HGV
HGW
HGX
HGY
HGZ
HHD
HHE
HHF
HHG
HHH
HHK
HHL
HHM
HHN
HHP
HHQ
HHR
Breakdown
Voltage
V(
BR
) (Volts)
(Note 1)
(MIN / MAX)
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Maximum
Reverse
Leakage
at V
WM
(Note 3) I
D
(uA)
Maximum
Peak Pulse
Surge
Current I
PPM
(Note 2) (Amps)
50.0 / 61.1
50.0 / 55.3
53.3 / 65.1
53.3 / 58.9
56.7 / 69.3
56.7 / 62.7
60.0 / 73.3
60.0 / 66.3
64.4 / 78.7
64.4 / 71.2
66.7 / 81.5
66.7 / 73.7
71.1 / 86.9
71.1 / 78.6
77.8 / 95.1
77.8 / 86.0
83.3 / 102
83.3 / 92.1
86.7 / 106
86.7 / 95.8
94.4 / 115
94.4 / 104
100 / 122
100 / 111
111 / 136
111 / 123
122 / 149
122 / 135
133 / 163
133 / 147
144 / 176
144 / 159
167 / 204
167 / 185
178 / 218
178 / 197
189 / 231
189 / 209
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
37.4
41.2
35.0
38.8
37.0
36.4
31.2
34.4
39.2
32.0
28.0
31.0
26.4
29.2
24.0
26.6
22.4
24.8
21.6
22.8
19.8
20.8
18.8
20.6
16.8
18.6
15.4
16.8
14.0
15.6
13.0
14.4
11.2
12.4
10.4
11.6
9.8
11.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
Notes:
1. V(
BR
) measured after I
T
applied for 300us, I
T
=Square wave pulse or equivalent.
2. Surge current waveform per Fig. 3 and derate per Figure 2.
3. For bidirectional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. all terms and symbols are consistent with ANSI/IEEE C62.35
- 537 -
Microcontroller MCU
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