HN2E04F
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E04F
Super High Speed Switching Application
Audio Frequency Amplifier Application
Audio Low Noise Amplifier Application
Q1
High Voltage
: V
CEO
= 120V
High DC Current Gain : h
FE
= 200 to 700
Good h
FE
Linearity
: h
FE
(I
C
= 0.1mA)/ h
FE
(I
C
= 2mA) = 0.95
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
: V
F(3)
= 0.98V (typ.)
: t
rr
= 1.6ns (typ.)
: C
T
= 0.5pF (typ.)
Unit: mm
Q2
Q1 (Transistor)
Q2 (Diode)
: 2SA1587 equivalent
: 1SS352 equivalent
1.NC
2.Emitter
3.Cathode
4.Anode
5.Collector
6.Base
Q1 (Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−120
−120
−5
−100
−20
Unit
V
V
V
mA
mA
JEDEC
JEITA
TOSHIBA
Weight: 0.015g (typ.)
―
―
2-3N1E
Q2 (Diode) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
Rating
85
80
300
100
1
Unit
V
V
mA
mA
A
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
125
−55
to 125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed 200mW per element.
Start of commercial production
2000-02
1
2014-03-01
HN2E04F
Q1 (Transistor)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition Frequency
Collector Output Capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
NF
Test
Circuit
―
―
―
―
―
―
―
Test Condition
V
CB
=
−120V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=− 6V, I
C
=
−2mA
I
C
=−10mA, I
B
=−1mA
V
CE
=
−6V,
I
C
=−1mA
V
CB
=−10V, I
E
= 0, f=1MHz
V
CE
= −6
V, I
C
= −0.1
mA
f
=
1 kHz, R
g
=
10 kΩ
Min
―
―
200
―
―
―
―
Typ.
―
―
―
―
100
4
1.0
Max
−100
−100
700
−0.3
―
―
―
V
MHz
pF
dB
Unit
nA
nA
*: h
FE
Classifications GR(G): 200 to 400 , BL(L): 350 to 700
( )Marking Symbol
Q2 (Diode)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
―
―
―
―
―
―
―
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
―
―
0.5
1.6
Max
―
―
1.20
0.1
0.5
―
―
μA
pF
ns
V
Unit
Marking
Type Name
Equivalent Circuit
(Top View)
6
h
FE
RANK
5
4
32G
Q1
Q2
1
2
3
2
2014-03-01
Electronics Design Contest
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