RN2907TE85R datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> RN2907TE85R

Preview

RN2907TE85R: DescriptionTRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size283KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

Download Datasheet Parametric Compare View All

RN2907TE85R Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN2907TE85R Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknow
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

RN2907TE85R Preview

RN2907~RN2909

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2907,RN2908,RN2909

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1907~1909

Equivalent Circuit and Bias Resistor Values

Type No.

RN2907

RN2908

RN2909

R1 (kΩ)

10

22

47

R2 (kΩ)

47

22

―

JEDEC

―

JEITA

2-2J1A

TOSHIBA

Weight: 6.8 mg(typ.)

Equivalent Circuit

(Top View)

1

2007-11-01

RN2907~RN2909

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2907~2909

RN2907

Emitter-base voltage

RN2908

RN2909

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2907~2909

I

C

P

C

*

T

j

T

stg

V

EBO

Symbol

V

CBO

V

CEO

Rating

−50

−6

−7

−15

−100

200

150

−55~150

mA

mW

°C

V

Unit

V

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* :

Total rating

Electrical Characteristics

(Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector cut-off

current

Symbol

I

CBO

I

CEO

Test

Circuit

―

I

EBO

―

h

FE

―

V

CE (sat)

―

V

I (ON)

―

V

I (OFF)

―

f

T

C

ob

―

R1

―

R1/R2

―

V

CE

=

−10V,

I

C

=

−5mA

V

CB

=

−10V,

I

E

= 0,

f = 1MHz

V

CE

=

−5V,

I

C

=

−0.1mA

V

CE

=

−0.2V,

I

C

=

−5mA

I

C

=

−5mA,

I

B

=

−0.25mA

V

CE

=

−5V,

I

C

=

−10mA

Test Condition

V

CB

=

−50V,

I

E

= 0

V

CE

=

−50V,

I

B

= 0

V

EB

=

−6V,

I

C

= 0

V

EB

=

−7V,

I

C

= 0

V

EB

=

−15V,

I

C

= 0

Min

―

−0.081

−0.078

−0.167

80

70

―

−0.7

−1.0

−2.2

−0.5

−0.6

−1.5

―

7

15.4

32.9

0.191

0.421

1.92

Typ.

―

−0.1

―

200

3

10

22

47

0.213

0.468

2.14

Max

−100

−500

−0.15

−0.145

−0.311

―

−0.3

−1.8

−2.6

−5.8

−1.0

−1.16

−2.6

―

6

13

28.6

61.1

0.232

0.515

2.35

―

kΩ

MHz

pF

V

―

mA

Unit

nA

RN2907~2909

RN2907

Emitter cut-off

current

RN2908

RN2909

RN2907

DC current gain

RN2908

RN2909

Collector-emitter

saturation voltage

RN2907~2909

RN2907

Input voltage (ON)

RN2908

RN2909

RN2907

Input voltage (OFF)

RN2908

RN2909

Translation

frequency

Collector output

capacitance

RN2907~2909

RN2907

Input resistor

RN2908

RN2909

RN2907

Resistor ratio

RN2908

RN2909

2

2007-11-01

RN2907~RN2909

(Q1, Q2 Common)

3

2007-11-01

RN2907~RN2909

(Q1, Q2 Common)

4

2007-11-01

RN2907~RN2909

Type Name

Marking

RN2907

RN2908

RN2909

5

2007-11-01

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

RN2907TE85R Related Products

	RN2907TE85R	RN2907(TE85L)	RN2907TE85L	RN2907TE85N	RN2907(TE85R)
Description	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknow	unknown	unknown	unknown	unknow
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213	BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	80	80	80	80
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2
Number of terminals	6	6	6	6	6
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Collector-based maximum capacity	6 pF	-	6 pF	6 pF	-
Maximum operating temperature	150 °C	-	150 °C	150 °C	-
VCEsat-Max	0.3 V	-	0.3 V	0.3 V	-
ECCN code	-	EAR99	-	EAR99	EAR99

Recommended Resources

transistor voltage amplifier

Low-frequency signal decomposition circuit using AD7520

High stability 10V regulated power supply circuit

Music control lantern circuit

Sawtooth wave generating circuit

GCA 20A/60V silicon rectifier charger circuit

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components