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RN2907(TE85R)

Description
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size283KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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RN2907(TE85R) Overview

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

RN2907(TE85R) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

RN2907(TE85R) Preview

RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2907,RN2908,RN2909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1907~1909
Equivalent Circuit and Bias Resistor Values
Type No.
RN2907
RN2908
RN2909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
JEITA
2-2J1A
TOSHIBA
Weight: 6.8 mg(typ.)
Equivalent Circuit
(Top View)
1
2007-11-01
RN2907~RN2909
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2907~2909
RN2907
Emitter-base voltage
RN2908
RN2909
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2907~2909
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* :
Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
Symbol
I
CBO
I
CEO
Test
Circuit
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−7V,
I
C
= 0
V
EB
=
−15V,
I
C
= 0
Min
−0.081
−0.078
−0.167
80
80
70
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
7
15.4
32.9
0.191
0.421
1.92
Typ.
−0.1
200
3
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
6
13
28.6
61.1
0.232
0.515
2.35
kΩ
MHz
pF
V
V
V
mA
Unit
nA
nA
RN2907~2909
RN2907
Emitter cut-off
current
RN2908
RN2909
RN2907
DC current gain
RN2908
RN2909
Collector-emitter
saturation voltage
RN2907~2909
RN2907
Input voltage (ON)
RN2908
RN2909
RN2907
Input voltage (OFF)
RN2908
RN2909
Translation
frequency
Collector output
capacitance
RN2907~2909
RN2907~2909
RN2907
Input resistor
RN2908
RN2909
RN2907
Resistor ratio
RN2908
RN2909
2
2007-11-01
RN2907~RN2909
(Q1, Q2 Common)
3
2007-11-01
RN2907~RN2909
(Q1, Q2 Common)
4
2007-11-01
RN2907~RN2909
Type Name
Marking
RN2907
RN2908
RN2909
5
2007-11-01

RN2907(TE85R) Related Products

RN2907(TE85R) RN2907(TE85L) RN2907TE85L RN2907TE85N RN2907TE85R
Description TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknow unknown unknown unknown unknow
Other features BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213 BUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 80 80 80
JESD-30 code R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
Number of components 2 2 2 2 2
Number of terminals 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
ECCN code EAR99 EAR99 - EAR99 -
Collector-based maximum capacity - - 6 pF 6 pF 6 pF
Maximum operating temperature - - 150 °C 150 °C 150 °C
VCEsat-Max - - 0.3 V 0.3 V 0.3 V
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