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BCY59C-QR-B

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size31KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCY59C-QR-B Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN

BCY59C-QR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionTO-18, 3 PIN
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
BCY59
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
GENERAL PURPOSE,
SMALL SIGNAL, NPN TRANSISTOR
5.33 (0.210)
4.32 (0.170)
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• JAN LEVEL SCREENING OPTIONS
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
12.7 (0.500)
min.
3
1
APPLICATIONS:
Intended for use in audio input stages, driver
stages and low noise input applications. The
2
TO-18 (TO-206AA)
Pin 1 – Emitter
Underside View
PAD 2 – Base
PAD 3 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CEO
V
BEO
I
C
P
TOT
T
J
, T
STG
R
θ
JC
R
θ
JA
Collector - Emitter Voltage (I
B
=0)
Emitter - Base Voltage (I
C
=0)
Collector Current
Total Power Dissipation @ T
amb
25
°C
@ T
c
45
°C
Maximum Junction And Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
45V
7V
200mA
390mW
1W
-55°C to 175°C
150°C/W
385°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5253
Issue 1

BCY59C-QR-B Related Products

BCY59C-QR-B BCY59C-QR-BG4 BCY59CG4
Description Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
Is it Rohs certified? conform to conform to conform to
package instruction TO-18, 3 PIN CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compli compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 60
JEDEC-95 code TO-206AA TO-206AA TO-206AA
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz
Maximum off time (toff) 800 ns 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns 150 ns
Maker TT Electronics plc - TT Electronics plc
JESD-609 code - e4 e4
Terminal surface - GOLD GOLD

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