<zS&mi-Condu<<k
oi
i,
fi
ne.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
1N5518thru 1N5546
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
• LOW REVERSE LEAKAGE CHARACTERISTICS
• LOW NOISE CHARACTERISTICS
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
'ZM
»
4 >-
at*/ on
I
i.Hvftt
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
V
z
ai2T
(NOTE 2)
VOLTS
ZENER
TEST
CURRENT
'rr
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT 8 IZT
(NOTE 3)
OHMS
MAXIMUM REVERSE
LEAKAGE CURRENT
B-C-D SUFFIX
MAX. NOISE
DENSITY
@
1
Z-25<Vl A
REGULATION
FACTOR
1V
Z
(NOTE
SI
LOW
v
z
CURRENT
'ZL
>R
(NOTE 4)
V
R
. VOLTS
NON & A-
ND
n vi
VHZ"
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
S.O
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
PttMlTT
ICirHMUl
.
ISO/ -170
3.W/4.S2
H
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0,01
0.01
0.01
0.01
0.01
0.01
0.01
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
B-C-0-
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
mAdc
VOLTS
mAdc
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
26
24
22
M
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0-05
0-05
0.05
0.1D
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0,30
0.35
0.40
0,45
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0011/0022
04««U1
T»-«
OIA
Ml limimitm in
INCH
mm
FIGU
RE1
DESIGN DAI
r
A
CASE: Hermeticall y sealed glass
le.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESIST;*NCE: (RSJEC):
250 'C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZQJX): 35
'C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
050
NOTE1
No Suffix type numbers are ±20% with guaranteed limits for only V£, IR, and Vp. Units
with "A" suffix are ±10% with guaranteed limits for V£, IR, and Vp Units with guaranteed limits for
all six parameters are indicated by a "B" suffix for ±5.0% units, "C" suffix for ±2.0% and "D" suffix
for ±1.0%.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C ± 3°C.
Zener impedance is derived by superimposing on 177- A60Hz rms a.c. current equal to 10% of IZT.
Reverse leakage currents are measured at VR as shown on the table.
NOTE 2
NOTE 3
NOTE 4
NOTES
AVZ is the maximum difference between VZ at IZT and V£ at I^L measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C ±3°C.
NI .S'emM. nnJucloo re»«rv«i the rig/H in ihangr
lot
condition!, parameter limito ,md pickag* dimension* withotrt notic*
lnfn«nalion liimnrwd by NI S«mK undlKIwi il Wfeved to h« hold UKuralt and rdluM* .11 Ifw lime of guinf lit preu. However S I
'iciiii-t1 iiJutlnn nMiiiMi IHI wpniuibiiily Kir :iny «ri"« >>r I>IIMV<MMH Jiiuivurrd in in ifre N.I Seim-4. viiiJiKli-r* oi
. ir.ri j'tr'i hi wi'l'» 'h it l:il:v-h..fii ire^iirreiwh«frfi: phxini) •
PCB Design
京公网安备 11010802033920号
EEWORLD
