AP2311GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
SOT-223
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
D
G
-60V
250mΩ
- 2.4A
I
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
- 60
+20
- 2.4
-2
-10
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
45
Unit
℃/W
1
201109091
Data and specifications subject to change without notice
AP2311GK-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-1.8A
V
GS
=-4.5V, I
D
=-1.4A
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2
-
-
6
1
3
8
5
22
3
510
50
40
Max. Units
-
250
300
-3
-
-25
+100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-1A
V
DS
=-48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-1A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-1.2A, V
GS
=0V
I
S
=-1A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
30
38
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 120
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2311GK-HF
10
10
T
A
=25 C
8
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
- 10V
- 7.0V
- 5.0V
- 4.5V
T
A
=150 C
8
o
- 10V
- 7.0V
- 5.0V
- 4.5V
6
6
4
V
G
= - 3.0V
4
V
G
= - 3.0V
2
2
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
2.2
I
D
= -1.4 A
240
T
A
=25
o
C
Normalized R
DS(ON)
1.8
I
D
= -1.8 A
V
G
=-10V
R
DS(ON)
(m
Ω
)
230
1.4
220
1.0
210
20
200
2
4
6
8
10
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
2
1.5
Normalized V
GS(th)
(V)
1.2
-I
S
(A)
1
0.8
T
j
=150 C
o
T
j
=25 C
o
0.5
0.4
0
0
0.4
0.8
1.2
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2311GK-HF
10
f=1.0MHz
610
-V
GS
, Gate to Source Voltage (V)
I
D
=-1A
V
DS
=-48V
8
490
C
iss
C (pF)
6
370
4
250
2
130
C
oss
C
rss
0
0
4
8
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
Operation in this area
limited by R
DS(ON)
0.2
100us
1ms
0.1
0.1
0.05
-I
D
(A)
1
0.02
0.01
10ms
100ms
0.1
P
DM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120℃/W
℃
1s
T
A
=25
o
C
Single Pulse
DC
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
2.5
V
G
2
-I
D
, Drain Current (A)
Q
G
1.5
-4.5V
Q
GS
Q
GD
1
0.5
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature (
o
C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
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