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AP2322GN-HF

Description
Capable of 1.8V gate drive, Simple Drive Requirement
CategoryDiscrete semiconductor    The transistor   
File Size91KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric View All

AP2322GN-HF Overview

Capable of 1.8V gate drive, Simple Drive Requirement

AP2322GN-HF Parametric

Parameter NameAttribute value
MakerAPEC
package instruction,
Reach Compliance Codecompli
AP2322GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Capable of 1.8V gate drive
Simple Drive Requirement
Surface mount package
RoHS Compliant & Halogen-Free
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
20V
90mΩ
2.5A
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
+8
2.5
2.0
10
0.833
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
150
Unit
℃/W
1
201009173
Data and specifications subject to change without notice
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