AP2611GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
-20V
9mΩ
-15.4A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK
®
3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
S
S
D
D
D
S
G
PMPAK
®
3x3
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
-20
+12
-15.4
-12.3
-50
3.12
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
5
40
Unit
℃/W
℃/W
1
201301311
Data and specifications subject to change without notice
AP2611GYT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-13A
V
GS
=-4.5V, I
D
=-10A
V
GS
=-2.5V, I
D
=-6A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-10A
V
DS
=-16V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=-10A
V
DS
=-10V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-5V
V
GS
=0V
V
DS
=-10V
f=1.0MHz
f=1.0MHz
Min.
-20
-
-
-
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
6.4
7.3
9.5
-0.6
41
-
-
50
4
16
15
22
260
140
615
610
13
Max. Units
-
8
9
12
-1.2
-
-10
+100
80
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
4500 7200
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-2.6A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
80
50
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
2oz copper pad of FR4 board, t <10sec ; 210
o
C/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2611GYT-HF
50
50
40
-I
D
, Drain Current (A)
30
-I
D
, Drain Current (A)
-5.0V
T
A
=25 C
-4.5V
-3.5V
-2.5V
V
G
= -1.8V
o
T
A
= 150
o
C
40
-5.0V
-4.5V
-3.5V
-2.5V
V
G
= -1.8V
30
20
20
10
10
0
0
1
2
3
4
5
0
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I
D
= -6 A
T
A
=25
℃
12
I
D
= -10A
V
G
= -4.5V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
10
1.2
8
0.8
6
0.4
1
2
3
4
5
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
I
D
= -250uA
8
1.2
6
T
j
=150
o
C
4
T
j
=25
o
C
Normalized V
GS(th)
-I
S
(A)
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2611GYT-HF
6
6000
f=1.0MHz
I
D
= -10 A
5
V
DS
= -10 V
5000
-V
GS
, Gate to Source Voltage (V)
C
iss
C (pF)
4
4000
3
3000
2
2000
1
1000
C
oss
C
rss
1
5
9
13
17
21
25
0
0
20
40
60
80
0
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
Normalized Thermal Response (R
thja
)
100us
1ms
10ms
0.2
0.1
0.1
-I
D
(A)
0.05
1
0.02
100ms
0.1
0.01
P
DM
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=210
℃/W
1s
T
A
=25
o
C
Single Pulse
DC
Single Pulse
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
16
V
DS
= -5V
40
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
12
30
8
T
j
=150 C
20
o
o
T
j
=25 C
10
4
T
j
= -40
o
C
0
0
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
京公网安备 11010802033920号
EEWORLD
