AP4232AGM
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Simple Drive Requirement
▼
Dual N MOSFET Package
D1
D2
D1
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
G2
S2
30V
23mΩ
7.8A
SO-8
S1
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
7.8
6.2
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201128071
AP4232AGM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7
-
-
-
10
2
5.6
7.4
6.4
19
4.6
620
100
85
Max. Units
-
23
35
3
-
1
25
±100
21
-
-
-
-
-
-
1150
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=7A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
22
14
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 135
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP4232AGM
50
50
T
A
= 25 C
40
o
I
D
, Drain Current (A)
10V
7.0 V
5.0 V
4.5 V
I
D
, Drain Current (A)
T
A
= 150
o
C
40
10V
7.0 V
5.0 V
4.5 V
30
30
20
20
V
G
= 3.0 V
10
V
G
= 3.0 V
10
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
1.6
I
D
=5A
T
A
=25
℃
28
I
D
=7A
V
G
=10V
Normalized R
DS(ON)
1.3
R
DS(ON)
(m
Ω
)
24
1.0
20
16
0.7
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
8
1.2
6
Normalized V
GS(th)
(V)
1.2
I
S
(A)
1.0
4
T
j
=150 C
o
T
j
=25 C
o
0.8
2
0
0.6
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4232AGM
f=1.0MHz
16
1000
I
D
=7A
V
GS
, Gate to Source Voltage (V)
12
C
iss
V
DS
=15V
V
DS
= 18 V
V
DS
=24V
C (pF)
8
100
C
oss
C
rss
4
0
0
4
8
12
16
20
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
I
D
(A)
100us
1ms
1
0.1
0.1
P
DM
0.05
10ms
100ms
0.1
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 135℃/W
0.02
0.01
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
1s
DC
Single Pulse
0.01
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V
DS
=5V
40
V
G
T
j
=25 C
o
T
j
=150 C
o
I
D
, Drain Current (A)
Q
G
4.5V
30
Q
GS
20
Q
GD
10
Charge
0
Q
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
SYMBOLS
Millimeters
MIN
NOM
MAX
A
8
7
6
5
E1
1
E
1.35
0.10
0.33
0.19
4.80
3.80
5.80
0.38
0
1.55
0.18
0.41
0.22
4.90
3.90
6.15
0.71
4.00
1.27 TYP
1.75
0.25
0.51
0.25
5.00
4.00
6.50
1.27
8.00
A1
B
C
D
E1
E
L
θ
2
3
4
e
B
e
A
A1
DETAIL A
L
θ
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
Package Code
meet Rohs requirement
4232AGM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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