AP6677GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-40V
12.3mΩ
-60A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-40
+20
-60
-38
-240
69
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.8
62.5
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200901221
AP6677GH
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-30A
V
GS
=-4.5V, I
D
=-20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-30A
V
DS
=-32V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-30A
V
DS
=-32V
V
GS
=-4.5V
V
DS
=-20V
I
D
=-30A
R
G
=3.3Ω,V
GS
=-10V
R
D
=0.67Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-40
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
46
-
-
44
6
28
11
60
60
120
560
380
Max. Units
-
12.3
18
-3
-
-25
+100
70
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
3160 5050
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-30A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
42
46
Max. Units
-1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6677GH
200
120
T
C
= 25 C
160
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-7.0 V
-6.0 V
-5.0 V
T
C
=150 C
100
o
80
-10V
-7.0V
-6.0V
-5.0V
V
G
= - 4.0 V
120
V
G
= - 4.0 V
80
60
40
40
20
0
0
2
4
6
8
10
0
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I
D
= -20 A
T
C
=25
℃
14
1.6
I
D
=-30A
V
G
=-10V
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(m
Ω
)
1.4
12
1.2
1.0
10
0.8
8
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
1.4
30
Normalized -V
GS(th)
(V)
1.2
-I
S
(A)
20
T
j
=150
o
C
T
j
=25
o
C
1
0.8
10
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6677GH
12
4000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
10
V
DS
=-32V
I
D
=-30A
C (pF)
3000
C
iss
8
6
2000
4
1000
2
C
oss
C
rss
0
0
10
20
30
40
50
60
70
80
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
-I
D
(A)
100us
0.1
0.1
0.05
1ms
10
P
DM
0.02
t
T
T
C
=25 C
Single Pulse
1
0.1
1
10
o
10ms
100ms
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
SYMBOLS
Millimeters
MIN
NOM
MAX
A2
A3
B1
D
D1
E3
F
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.50
5.10
0.50
--
0.35
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
0.65
E2
E3
E1
F1
E1
E2
e
C
B1
F1
F
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
e
A2
R : 0.127~0.381
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
Meet Rohs requirement
for low voltage MOSFET only
6677GH
LOGO
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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