Freescale Semiconductor
Technical Data
Document Number: MRF5S4125N
Rev. 0, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 465 MHz: V
DD
= 28 Volts,
I
DQ
= 1100 mA, P
out
= 25 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — - 47.6 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S4125NR1
MRF5S4125NBR1
450 - 480 MHz, 25 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
MRF5S4125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
MRF5S4125NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
- 65 to +150
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
Symbol
R
θJC
Value
(2,3)
0.33
0.43
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF5S4125NR1 MRF5S4125NBR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1100 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
2.41
74.61
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
2
3.5
0.05
3
4.25
0.175
4
5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1100 mA, P
out
= 25 W Avg. N - CDMA, f = 465 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
G
ps
η
D
ACPR
IRL
22
28
—
—
23
30.2
- 47.6
- 15
25
—
- 45
-9
dB
%
dBc
dB
MRF5S4125NR1 MRF5S4125NBR1
2
RF Device Data
Freescale Semiconductor
V
BIAS
C5
R1
B1
V
SUPPLY
+
R2
C6
B2
L3
C13
C14
C15
C16
Z19
RF
INPUT
R3
Z1
C1
C2
Z3
Z4
Z5
C3
C4
Z2
L1
Z6
Z7
L2
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z18
C11
C9
C10
Z16
Z17
Z20
RF
OUTPUT
DUT
C7
C8
Z21
C12
Z22
Z15
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Z12
0.186″
0.206″
1.171″
0.275″
0.985″
0.130″
0.131″
0.675″
0.397″
0.071″
0.008″
x 0.084″
x 0.084″
x 0.084″
x 0.084″
x 0.084″
x 0.084″
x 0.084″
x 0.504″
x 0.656″
x 0.084″
x 0.084″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
PCB
0.063″ x 0.084″ Microstrip
0.315″ x 0.084″ Microstrip
0.473″ x 0.084″ Microstrip
0.522″ x 0.084″ Microstrip
0.448″ x 0.084″ Microstrip
0.628″ x 0.084″ Microstrip
0.291″ x 0.084″ Microstrip
0.318″ x 0.084″ Microstrip
0.202″ x 0.084″ Microstrip
0.190″ x 0.084″ Microstrip
Arlon AD250, 0.030″,
ε
r
= 2.5
Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values
Part
B1, B2
C1, C6, C12, C13
C2, C10
C3, C9
C4
C5, C14, C15
C7
C8
C11
C16
L1, L2
L3
R1
R2
R3
Description
Ferrite Beads, Short
120 pF Chip Capacitors
0.8 - 8.0 pF, Variable Capacitors, Gigatrim
20 pF Chip Capacitors
8.2 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
27 pF Chip Capacitor
47 pF Chip Capacitor
3.3 pF Chip Capacitor
22
μF,
35 V Tantalum Capacitor
1.6 nH Inductors
27 nH Inductor
1000
Ω,
1/4 W Chip Resistor
10 kΩ, 1/4 W Chip Resistor
100
Ω,
1/4 W Chip Resistor
Part Number
2743019447
ATC600B121BT250XT
27291SL
ATC600B200BT250XT
ATC600B8R2BT250XT
GRM55DR61H106KA88L
ATC600B270BT250XT
ATC600B470BT250XT
ATC600B3R3BT250XT
T491X226K035A5
0906 - 2
1812SMS - 27N_L
CRCW12061001FKTA
CRCW12061002FKTA
CRCW1206100RFKTA
Manufacturer
Fair - Rite
ATC
Johanson
ATC
ATC
Murata
ATC
ATC
ATC
Kemet
Coilcraft
Coilcraft
Vishay
Vishay
Vishay
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
3
C6
B1
C14
R1
C15
B2
R2
C13
C16
C5
CUT OUT AREA
L3
R3
C1
C2
L1
L2
C3
C4
C8
C7
C9
C11
C10
C12
MRF5S4125N
Rev. 1
Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout
MRF5S4125NR1 MRF5S4125NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
0
−5
−10
−15
−20
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
0
−5
−10
−15
−20
I
DQ
= 550 mA
562.5 mA
825 mA
−40
1375 mA
1100 mA
−50
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
200 300
1
10
100
200 300
P
out
, OUTPUT POWER (WATTS) PEP
25
24
G
ps
, POWER GAIN (dB)
23
22
21
ACPR
20
19
IRL
18
−60
ALT1
430
440
450
460
470
480
490
−65
500
17
420
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 25 W (Avg.)
I
DQ
= 1100 mA, Single−Carrier N−CDMA
36
32
28
24
−45
−50
−55
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ P
out
= 25 Watts Avg.
25
24
G
ps
, POWER GAIN (dB)
23
22
21
20
19
18
ACPR
IRL
G
ps
V
DD
= 28 Vdc, P
out
= 58 W (Avg.)
I
DQ
= 1100 mA, Single−Carrier N−CDMA
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
η
D
52
48
44
40
−20
−30
−40
−50
−60
500
ALT1
17
420
430
440
450
460
470
480
490
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ P
out
= 58 Watts Avg.
25
24
G
ps
, POWER GAIN (dB)
23
22
21
20
19
18
V
DD
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
1375 mA
1100 mA
825 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
I
DQ
= 1650 mA
−10
V
DD
= 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−20
−30
550 mA
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
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