PD -
97751
AUTOMOTIVE GRADE
AUIRF7313Q
HEXFET
®
Power MOSFET
8
7
Features
l
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Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified*
S1
G1
S2
G2
1
2
D1
D1
D2
D2
3
4
6
5
Top View
V
(BR)DSS
R
DS(on)
typ.
max.
I
D
30V
23mΩ
29mΩ
6.9A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7313Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
DS
Drain-Source Voltage
Max.
30
Units
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
c
e
d
6.9
5.8
58
2.4
0.02
± 20
450
3.6
-55 to + 175
A
W
W/°C
V
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJL
Junction-to-Drain Lead
Max.
20
62.5
Units
°C/W
R
θJA
Junction-to-Ambient
gh
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
1/5/12
AUIRF7313Q
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
–––
–––
–––
1.0
7.5
–––
–––
–––
–––
–––
0.03
23
32
–––
–––
–––
–––
–––
–––
–––
–––
29
46
3.0
–––
1.0
25
-100
100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.9A
mΩ
V
GS
= 4.5V, I
D
= 5.5A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 15V, I
D
= 3.5A
V
DS
= 24V, V
GS
= 0V
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
f
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
2.6
6.8
3.7
7.3
21
11
755
310
120
33
3.9
10
–––
–––
–––
–––
–––
–––
–––
nC
I
D
= 3.5A
V
DS
= 15V
V
GS
= 10V
V
DD
= 15V
I
D
= 3.5A
R
G
= 6.8Ω
V
GS
=10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
Conditions
f
ns
f
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
27
43
3.0
A
58
1.0
40
65
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 3.5A, V
GS
= 0V
T
J
= 25°C,I
F
= 3.5A
di/dt = 100A/μs
f
f
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 76mH, R
G
= 50Ω, I
AS
= 3.5A, V
GS
=10V. Part not recommended for use above this value.
I
SD
≤
3.5A, di/dt
≤
590A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
When mounted on 1 inch square copper board.
R
θ
is measured at
T
J
of approximately 90°C.
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2
AUIRF7313Q
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
Class M1B (+/- 100 V)
AEC-Q101-002
Class H1A (+/- 500 V)
AEC-Q101-001
Class C5 (+/- 2000 V)
AEC-Q101-005
Yes
†††
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device Model
RoHS Compliant
†
††
†††
†††
ESD
†††
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
Ordering Information
Base part number
AUIRF7313Q
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7313Q
AUIRF7313QTR
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3
AUIRF7313Q
100
TOP
VGS
15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
100
≤60μs
PULSE WIDTH
Tj = 175°C
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
4.5V
3.5V
3.0V
2.8V
ID, Drain-to-Source Current (A)
10
BOTTOM
BOTTOM
10
1
2.8V
0.1
0.1
≤60μs
PULSE WIDTH Tj = 25°C
1
10
100
1
0.1
1
2.8V
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 6.9A
VGS = 10V
10
TJ = 175°C
1.5
1
T J = 25°C
1.0
VDS = 15V
≤60μs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
0.5
-60
-20
20
60
100
140
180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14.0
ID= 3.5A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
VDS= 6.0V
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs. Gate-to-Source Voltage
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4
AUIRF7313Q
100
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
1ms
10
10ms
100μs
10
T J = 175°C
1
T J = 25°C
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.10
1
10
100
0.1
VGS = 0V
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source-to-Drain Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
7
6
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
2000
EAS , Single Pulse Avalanche Energy (mJ)
1600
5
4
3
2
1
0
25
50
75
100
125
150
175
T A , Ambient Temperature (°C)
ID
TOP
1.0A
1.6A
BOTTOM 3.5A
1200
800
400
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs. Ambient Temperature
100
Thermal Response ( Z thJA ) °C/W
Fig 10.
Maximum Avalanche Energy vs. DrainCurrent
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
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Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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