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B1100LB

Description
2 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

B1100LB Overview

2 A, 100 V, SILICON, SIGNAL DIODE

B1100LB
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 50A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
B
SMB
Dim
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
A
B
C
D
A
C
D
E
G
H
Mechanical Data
·
·
·
·
·
Case: SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: B110LB and Date Code
Weight: 0.093 grams (approx.)
J
H
G
E
J
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
@ T
T
= 120°C
@ T
T
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
@ I
F
= 1.0A, T
A
= 25°C
@ T
A
= 25°C
@ T
A
= 100°C
Average Rectified Output Current
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJT
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
B1100LB
100
70
1.0
2.0
50
0.75
0.5
5.0
100
22
-65 to +150
Unit
V
V
A
A
V
mA
pF
K/W
°C
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30077 Rev. A-2
1 of 2
B1100LB

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