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B40C800DM

Description
0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size76KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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B40C800DM Overview

0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE

B40C800DM Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current45 A
Number of components4
Maximum operating temperature125 °C
Maximum output current0.9 A
Maximum repetitive peak reverse voltage90 V
surface mountNO
Base Number Matches1
B40C800DM, B80C800DM, B125C800DM, B250C800DM, B380C800DM
www.vishay.com
Vishay General Semiconductor
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
~
~
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFM
MECHANICAL DATA
DFM
0.9 A
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 0.9 A
T
J
max.
Diode variations
Case:
DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
per
65 V, 125 V, 200 V, 400 V, 600 V
45 A
10 μA
1.0 V
125 °C
Quad
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS input voltage R- and C-load
Maximum average forward output current
for free air operation at T
A
= 45 °C
Maximum DC blocking voltage
Maximum peak working voltage
Maximum non-repetitive peak voltage
Maximum repetitive peak forward surge current
Peak forward surge current single sine-wave on rated load
Rating for fusing at T
J
= 125 °C (t < 100 ms)
Minimum series resistor C-load at V
RMS
= ± 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
+ 50 %
- 10 %
R- and L-load
C-load
SYMBOL
V
RRM
V
RMS
I
F(AV)
V
DC
V
RWM
V
RSM
I
FRM
I
FSM
I
2
t
R
T
C
L
T
J
T
STG
1.0
5000
2.0
2500
65
90
100
125
180
200
B40
C800DM
65
40
B80
C800DM
125
80
B125
C800DM
200
125
0.9
0.8
200
300
350
10
45
10
4.0
1000
- 40 to + 125
- 40 to + 150
8.0
500
12.0
200
400
600
650
600
900
1000
B250
C800DM
400
250
B380
C800DM
600
380
UNIT
V
V
A
V
V
V
A
A
A
2
s
μF
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage drop per diode
Maximum reverse current at rated
repetitive peak voltage per diode
Revision: 16-Aug-13
TEST CONDITIONS
0.9 A
SYMBOL
V
F
I
R
B40
C800DM
B80
C800DM
B125
C800DM
1.0
10
B250
C800DM
B380
C800DM
UNIT
V
μA
Document Number: 88533
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

B40C800DM Related Products

B40C800DM B250C800DM-E345 B380C800DM
Description 0.9 A, 65 V, SILICON, BRIDGE RECTIFIER DIODE 0.9 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 0.9 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Maker Vishay - Vishay
Reach Compliance Code unknown - unknow
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V - 1 V
Maximum non-repetitive peak forward current 45 A - 45 A
Number of components 4 - 4
Maximum operating temperature 125 °C - 125 °C
Maximum output current 0.9 A - 0.9 A
Maximum repetitive peak reverse voltage 90 V - 600 V
surface mount NO - NO
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