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BLF178P

Description
SILICON, VHF BAND, MIXER DIODE
CategoryDiscrete semiconductor    The transistor   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF178P Overview

SILICON, VHF BAND, MIXER DIODE

BLF178P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, CERAMIC PACKAGE-4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage110 V
Maximum drain current (ID)88 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Humidity sensitivity level1
Number of components2
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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