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BPV11F_08

Description
Silicon NPN Phototransistor, RoHS Compliant
File Size110KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

BPV11F_08 Overview

Silicon NPN Phototransistor, RoHS Compliant

BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
emitters
12784
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 15°
• Base terminal connected
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
and control
PRODUCT SUMMARY
COMPONENT
BPV11F
Note
Test condition see table “Basic Characteristics”
I
ca
(mA)
9
ϕ
(deg)
± 15
λ
0.5
(nm)
900 to 980
ORDERING INFORMATION
ORDERING CODE
BPV11F
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 3000 pcs, 3000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
5 s, 2 mm from body
Connected with Cu wire, 0.14 mm
2
t
p
/T = 0.5, t
p
10 ms
T
amb
47 °C
TEST CONDITION
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
80
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
www.vishay.com
346
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81505
Rev. 1.6, 05-Sep-08
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