BPW21R
Vishay Semiconductors
Silicon Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity:
ϕ
= ± 50°
94
8394
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
DESCRIPTION
BPW21R is a planar Silicon PN photodiode in a hermetically
sealed short TO-5 case, especially designed for high
precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
The device is equipped with a flat glass window with built in
color correction filter, giving an approximation to the spectral
response of the human eye.
• Low dark current
• High shunt resistance
• High linearity
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Sensor in exposure and color measuring purposes
PRODUCT SUMMARY
COMPONENT
BPW21R
Note
Test condition see table “Basic Characteristics”
I
ra
(mA)
9
ϕ
(deg)
± 50
λ
0.5
(nm)
420 to 675
ORDERING INFORMATION
ORDERING CODE
BPW21R
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 500 pcs, 500 pcs/bulk
PACKAGE FORM
TO-5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
Connected with Cu wire, 0.14
mm
2
T
amb
≤
50 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
10
300
125
- 40 to + 125
- 40 to + 125
260
250
UNIT
V
mW
°C
°C
°C
°C
K/W
www.vishay.com
378
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81519
Rev. 1.6, 08-Sep-08
BPW21R
Silicon Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
K
Reverse light current
Sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
Note
T
amb
= 25 °C, unless otherwise specified
V
R
= 0 V, R
L
= 1 kΩ,
λ
= 660 nm
V
R
= 0 V, R
L
= 1 kΩ,
λ
= 660 nm
TEST CONDITION
I
F
= 50 mA
I
R
= 20 µA, E = 0
V
R
= 5 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
V
R
= 10 mV
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
V
R
= 5 V, E
A
=
10
-2
to
10
5
lx
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
R
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
S
ϕ
λ
p
λ
0.5
t
r
t
f
4.5
4.5
280
10
2
1.2
400
38
450
-2
9
- 0.05
9
9
± 50
565
420 to 675
3.1
3.0
30
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
nF
pF
GΩ
mV
mV/K
µA
%/K
µA
nA/Ix
deg
nm
nm
µs
µs
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
4
1.3
I
ra rel
- RelativeReverse Light Current
I
ro
- Reverse Dark Current (nA)
10
3
1.2
1.1
10
2
V
R
= 5
V
10
1
1.0
0.9
0.8
0
20
40
60
80
100
120
10
20
94
8468
40
60
80
100
120
94
8738
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81519
Rev. 1.6, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
379
BPW21R
Vishay Semiconductors
Silicon Photodiode, RoHS Compliant
10
I
K
- Short Circuit Current (µA)
3
0°
10°
20°
30°
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
6
40°
1.0
0.9
0.8
50°
60°
70°
80°
0.6
0.4
0.2
0
0.7
94
8476
E
A
- Illuminance (lx)
94
8475
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
1400
C
D
- Diode Capacitance (pF)
1200
1000
800
600
400
200
0
0.1
1
10
100
E=0
f = 1 MHz
94
8473
V
R
- Reverse
Voltage
(V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
S (λ)
rel
- Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
350
V
λ
Eye
450
550
650
750
94
8477
λ
-
Wavelength
(nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
www.vishay.com
380
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81519
Rev. 1.6, 08-Sep-08
ϕ
- Angular Displacement
10
2
S
rel
- Relative Sensitivity
BPW21R
Silicon Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
9.1
± 0.1
+
-
5.08 nom.
Ø
8.13
± 0.1
± 0.2
Ø 5.9
± 0.1
Chip position
3.1
14
-1
(1.65)
technical drawings
according to DIN
specifications
Ø 0.45
+ 0.02
- 0.05
Drawing-No.: 6.511-5002.01-4
Issue:1; 01.07.96
96 12181
Document Number: 81519
Rev. 1.6, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
381
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
京公网安备 11010802033920号
EEWORLD
