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BR610

Description
6 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size84KB,2 Pages
ManufacturerHY Electronic
Websitehttp://www.hygroup.com.tw
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6 A, SILICON, BRIDGE RECTIFIER DIODE

BR610 Parametric

Parameter NameAttribute value
MakerHY Electronic
Reach Compliance Codeunknow
Diode typeBRIDGE RECTIFIER DIODE
BR6005 thru BR610
SILICON BRIDGE RECTIFIERS
REVERSE VOLTAGE
FORWARD CURRENT
BR6
.276(7.0)
.236(6.0)
- 50
to
1000Volts
- 6.0
Amperes
FEATURES
Surge overload rating -175 amperes peak
Low forward voltage drop
Small size; simple installation
Sliver plated copper leads
Mounting position: Any
.042(1.07)
DIA.
.038(0.97)
.750
(19.0)
MIN
.620(15.7)
.580(14.7)
HOLE FOR
NO.6 SCREW
.445(11.3)
.405(10.3)
.620(15.7)
.580(14.7)
.445(11.3)
.405(10.3)
Polarity shown on side of case, Positive lead by beveled corner.
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum Average Forward
Rectified Output Current at
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load
Maximum Forward Voltage Drop
Per Bridge Element at 3.0A Peak
Maximum Reverse Current at Rated T
J
=25℃
DC Blocking Voltage Per Element
Operating Temperature Range
Storage Temperature Range
T
J
=100℃
T
A
=50℃
SYMBOL BR6005
V
RRM
V
RMS
I
(AV)
50
35
BR601
100
70
BR602
200
140
BR604
400
280
6.0
BR606
600
420
BR608
800
560
BR610
1000
700
UNIT
V
V
A
I
FSM
175
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
-55 to +125
-55 to +150
V
μA
mA
~ 316 ~

BR610 Related Products

BR610 BR606 BR608
Description 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE 6 A, SILICON, BRIDGE RECTIFIER DIODE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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