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BRF48035

Description
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
File Size38KB,6 Pages
ManufacturerETC1
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BRF48035 Overview

MEDIUM POWER SILICON MICROWAVE TRANSISTOR

BIPOLARICS, INC.
Part Number BRF480
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF480 is a high performance silicon bipolar
transistor intended for medium power linear and Class C
applications at VHF, UHF and microwave frequencies in 7.2
and 12V systems. Depending on package type, the BRF480
can operate at up to 0.5W. These applications include high
intermod receivers, CATV and instrumentation amplifiers as
well as pre-drivers, drivers and final stages in transmitter
applications such as cellular telephone. Package options in-
clude Dice, SOT-223 Surface Mount, Ceramic Micro-X,
0.145" Plastic SOT-103 and 0.230" power flange package.
High Gain Bandwidth Product
f = 8 GHz typ @ I
C
= 70 mA
t
|S
21
|
2
= 14.2 dB @ 1.0 GHz
8.2 dB @ 2.0 GHz
High Gain
Dice, Plastic, Hermetic and Surface
Mount packages available
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
V
CBO
V
CEO
V
EBO
I
C
I
C
MAX
T
J
(1)
T
STG
Collector-Base Voltage
25
V
V
V
mA
mA
o
C
o
C
C/W
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
θ
JC
Collector-Emitter Voltage
15
Emitter-Base Voltage
1.5
Collector Current (continuous)
120
Collector Current (instantaneous)
180
Junction Temperature
200
Storage Temperature
-65 to 150
Thermal Resistance
50
(1) Depends on package
SYMBOL
PARAMETERS & CONDITIONS
V
CE
= 8V, I
C
=60 mA, Class A, unless stated
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
Micro-X
SOT-103
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
I
C
= 75 mA
f = 1.0 GHz
GHz
dB
dB
dBm
8.0
14.2
8.2
27.0
|S
21
|
2
P
1d B
NF
h
FE
I
CBO
Power output at 1dB compression:
Noise Figure: V
CE
= 5V, I
C
=20 mA
dB
1.6
Forward Current Transfer Ratio: V
CE
= 5V, I
C
= 15 mA
Collector Cutoff Current : V
CB
= 8V
µA
30
100
300
0.4
C
CB
Collector Base Capacitance: V
CB
=8V
f = 1MHz
pF
.75
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