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BSS63

Description
200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size52KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BSS63 Overview

200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BSS63 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.225 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS63
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 16

BSS63 Related Products

BSS63 BSS63,215
Description 200 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Is it Rohs certified? incompatible conform to
Maker NXP NXP
Reach Compliance Code unknow compli
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single SINGLE
Minimum DC current gain (hFE) 30 30
JESD-609 code e0 e3
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.225 W 0.225 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin (Sn)
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