DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BST60; BST61; BST62
PNP Darlington transistors
Product data sheet
Supersedes data of 2001 Feb 20
2004 Dec 09
NXP Semiconductors
Product data sheet
PNP Darlington transistors
FEATURES
•
High current (max. 0.5 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Industrial switching applications such as:
– Print hammer
– Solenoid
– Relay and lamp driving.
PINNING
PIN
1
2
3
BST60; BST61; BST62
DESCRIPTION
emitter
collector
base
2
3
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BST50, BST51 and BST52.
MARKING
TYPE NUMBER
BST60
BST61
BST62
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BST60
BST61
BST62
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
MARKING CODE
BS1
BS2
BS3
Fig.1 Simplified outline (SOT89) and symbol.
3
2
1
1
sym081
2004 Dec 09
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BST60
BST61
BST62
V
CES
collector-emitter voltage
BST60
BST61
BST62
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0 V
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BST60; BST61; BST62
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−80
−90
−45
−60
−80
−5
−1
−2
−100
1.3
+150
150
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 09
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
PARAMETER
collector-emitter cut-off current
BST60
BST61
BST62
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
BE
= 0 V; V
CE
=
−45
V
V
BE
= 0 V; V
CE
=
−60
V
V
BE
= 0 V; V
CE
=
−80
V
I
C
= 0 A; V
EB
=
−4
V
V
CE
=
−10
V; note 1; see Fig.2
I
C
=
−150
mA
I
C
=
−500
mA
V
CEsat
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−500
mA; I
B
=
−0.5
mA;
T
j
= 150
°C
I
C
=
−500
mA; I
B
=
−0.5
mA
I
C
=
−500
mA; V
CE
=
−5
V;
f = 100 MHz
I
Con
=
−500
mA; I
Bon
=
−0.5
mA;
I
Boff
= 0.5 mA
CONDITIONS
BST60; BST61; BST62
MIN.
−
−
−
−
1 000
2 000
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
200
MAX.
−50
−50
−50
−50
−
−
−1.3
−1.3
−1.9
−
UNIT
nA
nA
nA
nA
V
V
V
MHz
V
BEsat
f
T
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
off
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
turn-on time
turn-off time
−
−
500
700
−
−
ns
ns
2004 Dec 09
4
NXP Semiconductors
Product data sheet
PNP Darlington transistors
BST60; BST61; BST62
handbook, full pagewidth
6000
MGD839
hFE
5000
4000
3000
2000
1000
0
−10
−1
V
CE
=
−10
V.
−1
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
=
−10
V; T = 200
μs;
t
p
= 6
μs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18
Ω.
V
BB
= 1.8 V; V
CC
=
−10.7
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
2004 Dec 09
5
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