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BZD27-C30P

Description
150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
Categorysemiconductor    Discrete semiconductor   
File Size32KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

BZD27-C30P Overview

150 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB

BZD27 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
3.6 to 200V
TVS V
WM
Range
6.2 to 160V
Power Dissipation
2.3W
Zener Diodes
DO-219AB (SMF)
Cathode Band
Top View
1.8
±
0.1
1.0
±
0.2
5
°
0.98
±
0.1
5
°
Detail
Z
enlarged
Z
2.8
±
0.1
0.05 - 0.30
ted
ten
Pa
Mounting Pad Layout
1.6
1.2
0.60
±
0.25
1.2
Dimensions in millimeters
0.00 – 0.10
3.7
±
0.2
Mechanical Data
Case:
JEDEC DO-219 Plastic Case
Weight:
approx. 0.01g
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
Features
• Silicon Planar Power Zener Diodes.
• Low profile surface-mount package.
• Zener and TVS specification.
Maximum Ratings and Thermal Characteristics
Parameter
Power Dissipation at T
L
= 105°C
Power Dissipation at T
A
= 25°C
Non-repetitive peak pulse power dissipation
with 100µs square pulse
(2)
Non-repetitive peak pulse power dissipation
with 10/1000µs waveform (BZ027-C7V5 to -C200)
(2)
Thermal Resistance Junction to Ambient Air
(1)
Thermal Resistance Junction to Lead
Maximum Junction Temperature
Storage Temperature Range
Notes:
(1) Mounted on epoxy-glass PCB with 3 x 3mm Cu pads (≥ 40µm thick)
(2) T
J
= 25°C prior to surge
(T
A
= 25°C unless otherwise noted)
Symbol
P
tot
P
tot
P
ZSM
P
RSM
R
θJA
R
θJL
T
j
T
S
Value
2.3
0.8
(1)
300
150
188
30
175
–65 to +175
Unit
W
W
W
W
°C/W
°C/W
°C
°C
Document Number 88311
06-May-02
www.vishay.com
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