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BZG05C8V2

Description
8.2 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size81KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

BZG05C8V2 Overview

8.2 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC

BZG05C8V2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeDO-214
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance6 Ω
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1.25 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal locationDUAL
Maximum voltage tolerance6.1%
Working test current25 mA
BZG05C-Series
www.vishay.com
Vishay Semiconductors
Zener Diodes
FEATURES
• High reliability
• Voltage range 3.3 V to 100 V
• Fits onto 5 mm SMD footpads
• Wave and reflow solderable
• AEC-101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
3.3 to 100
2.7 to 80
Pulse current
Single
UNIT
V
mA
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
BZG05C-series
BZG05C-series
ORDERING CODE
BZG05C-series-TR
BZG05C-series-TR3
TAPED UNITS PER REEL
1500 per 7" reel
6000 per 13" reel
6000/box
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
DO-214AC
WEIGHT
77 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power
dissipation
Junction to lead
Mounted on epoxy-glass hard tissue,
fig. 1a
Mounted on epoxy-glass hard tissue,
fig. 1b
Mounted on Al-oxid-ceramic (Al
2
O
3
),
fig. 1b
TEST CONDITION
R
thJA
< 30 K/W, T
amb
= 60 °C
R
thJA
< 100 K/W, T
amb
= 25 °C
t
p
= 100 μs sq.pulse, T
j
= 25 °C
prior to surge
SYMBOL
P
tot
P
tot
P
ZSM
R
thJL
R
thJA
R
thJA
R
thJA
T
j
T
stg
I
F
= 0.2 A
V
F
VALUE
3000
1250
60
30
150
125
100
150
- 65 to + 150
1.2
UNIT
mW
mW
W
K/W
K/W
K/W
K/W
°C
°C
V
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
Rev. 2.1, 29-Nov-11
Document Number: 85595
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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