BZT03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Clamping time in picoseconds
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:
SOD-57 Sintered glass case
Weight:
approx. 369 mg
Packaging Codes/Options:
TAP / 5 k Ammopack (52 mm tape) / 25 k/box
TR / 5 k 10" reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power t
p
= 100
µs,
T
j
= 25 °C
dissipation
Junction temperature
Storage temperature range
Test condition
l = 10 mm, T
L
= 25 °C
T
amb
= 25 °C
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
- 65 to + 175
Unit
W
W
W
W
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
1
BZT03-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
50
3
I
F
Forward Current (A )
–
3.0
2.5
2.0
T
j
=25°C
1.5
1.0
0.5
0
25
50
7
2
94 9086a
94 9585
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Epoxy Glass Hard Tissue, Board Thickness 1.5 mm,
R
thJA
≤100
K/W
P
ZSM
– Non-Repetitive Surge Power
Dissipation (W )
Figure 3. Forward Current vs. Forward Voltage
P
tot
–Total Power Dissipation ( W )
4
l=10mm
3
15mm
2
20mm
1
see Fig.1
0
0
40
80
l
l
10000
T
j
=25°C
1000
T
L
=constant
100
120
160
200
94 9586
10
0.01
0.1
1
10
100
94 9584
T
amb
– Ambient T
emperature ( °C )
t
p
– Pulse Length ( ms )
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
www.vishay.com
4
Document Number 85599
Rev. 1.4, 13-Jul-05
BZT03-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
5
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