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BZT52C4V3

Description
4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size168KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52C4V3 Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
Surface Mount Zener Diode
BZT52C Series
Electrical Characteristics @ T
A
=25℃ unless otherwise specified
Type
Number
Marking
Code
Zener Voltage Range
(Note 2)
Min
V
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
V
Z
Nom
V
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
Max
V
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
@I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
Maximum Zener Impedance
(Note 3)
Z
ZT
@I
ZT
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
100
100
Z
ZK
@I
ZK
mA
600
1.0
600
1.0
600
1.0
600
1.0
600
1.0
600
1.0
600
1.0
500
1.0
480
1.0
400
1.0
150
1.0
80
1.0
80
1.0
80
1.0
100
1.0
150
1.0
150
1.0
150
1.0
170
1.0
200
1.0
200
1.0
225
1.0
225
1.0
250
1.0
250
1.0
300
0.5
300
0.5
325
0.5
350
0.5
350
0.5
700
1.0
750
1.0
750
1.0
500mW, SOD-123
Temperature
Maximum
Coefficient of
Reverse
Zener Voltage
Current
@ I
ZT
= 5 mA
(Note 2)
mV /
I
R
V
R
µA
V
Min
Max
50
1.0
-3.5
0
20
1.0
-3.5
0
10
1.0
-3.5
0
5
1.0
-3.5
0
5
1.0
-3.5
0
3
1.0
-3.5
0
3
1.0
-3.5
0
3
2.0
-3.5
0.2
2
2.0
-2.7
1.2
1
2.0
-2.0
2.5
3
4.0
0.4
3.7
2
4.0
1.2
4.5
1
5.0
2.5
5.3
0.7
5.0
3.2
6.2
0.5
6.0
3.8
7.0
0.2
7.0
4.5
8.0
0.1
8.0
5.4
9.0
0.1
8.0
6.0
10.0
0.1
8.0
7.0
11.0
0.1
10.5
9.2
13.0
0.1
11.2
10.4
14.0
0.1
12.6
12.4
16.0
0.1
14.0
14.4
18.0
0.1
15.4
16.4
20.0
0.1
16.8
18.4
22.0
0.1
18.9
21.4
25.3
0.1
21.0
24.4
29.4
0.1
23.1
27.4
33.4
0.1
25.2
30.4
37.4
0.1
27.3
33.4
41.2
0.1
32.0
10.0
12.0
0.1
35.0
10.0
12.0
0.1
38.0
10.0
12.0
BZT52C2V4
WX
BZT52C2V7
W1
BZT52C3V0
W2
BZT52C3V3
W3
BZT52C3V6
W4
BZT52C3V9
W5
BZT52C4V3
W6
BZT52C4V7
W7
BZT52C5V1
W8
BZT52C5V6
W9
BZT52C6V2
WA
BZT52C6V8
WB
BZT52C7V5
WC
BZT52C8V2
WD
BZT52C9V1
WE
BZT52C10
WF
BZT52C11
WG
BZT52C12
WH
BZT52C13
WI
BZT52C15
WJ
BZT52C16
WK
BZT52C18
WL
BZT52C20
WM
BZT52C22
WN
BZT52C24
WO
BZT52C27
WP
BZT52C30
WQ
BZT52C33
WR
BZT52C36
WS
BZT52C39
WT
BZT52C43
WU
BZT52C47
WV
BZT52C51
WW
Notes:
1. Valid provided that device terminals are keep at ambient temperature
2. Test with pulses. period = 5 ms, pulse width = 300 µA
3. f = 1 K Hz
Maximum Ratings @ T
A
=25℃ unless otherwise specified
Characteristic
Symbol
Value
Power Dissipation (Note 1), Derate above 25
P
d
500
Forward Voltage (Note 2) @ I
F
= 10 mA
V
F
0.9
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θJA
305
Operating and Storage Temperature Range
T
J
, T
STG
-65 ~ +150
Notes:
2
1. Device mounted on ceramic PCB; 7.6mm×9.4mm×0.87mm with pad areas 25mm .
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1 K Hz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Unit
mW
V
/W
Any changing of specification will not be informed individual
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