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BZT52C8V2

Description
8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size127KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BZT52C8V2 Overview

8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT52C8V2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance7 Ω
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.41 W
Certification statusNot Qualified
Nominal reference voltage8.2 V
surface mountYES
technologyZENER
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Maximum voltage tolerance6.1%
Working test current5 mA
BZT52-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
Available
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2.5; 5
Pulse current
Single
UNIT
V
mA
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52-series
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
10 000 (8 mm tape on 13" reel)
10 000/box
3000 (8 mm tape on 7" reel)
15 000/box
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOD-123
WEIGHT
10.3 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
See table “Electrical Characteristics “
Valid provided that electrodes are kept at
ambient temperature
R
thJA
T
j
T
stg
T
op
300
150
-65 to +150
-55 to +150
K/W
°C
°C
°C
SYMBOL
P
tot
P
tot
VALUE
500
410
UNIT
mW
mW
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Rev. 1.9, 08-Nov-16
Document Number: 85760
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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