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BZT55B3V9

Description
3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size309KB,5 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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BZT55B3V9 Overview

3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZT55 Series
SILICON EPITAXIAL PLANAR ZENER DIODES
Features
• Very sharp reverse characteristic
• Low reverse current level
• Available with tighter tolerances
• Very high stability
• Low noise
LS-34
Applications
• Voltage stabilization
QuadroMELF
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Z-Current
Junction Temperature
Storage Temperature Range
Symbol
P
tot
I
Z
T
j
T
S
Value
500
P
tot
/ V
Z
175
- 65 to + 175
Unit
mW
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
On PC board 50 mm X 50 mm X 1.6 mm
Forward Voltage
at I
F
= 100 mA
Symbol
R
thJA
V
F
Max.
500
1.5
Unit
K/W
V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
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