THYRISTOR MODULE
PK
(PD,PE)
55FG
UL;E76102 M）
（
Power Thyristor/Diode Module
PK55FG
series are designed for various rectifier circuits
and power controls. For your circuit application, following internal connections and wide
voltage ratings up to 1600V are available. and electrically isolated mounting base make
your mechanical design easy.
２φ6．
- ０
２．
５０
１．
２０
92．
０
2 ． 2 ． 2 ．
００ ００ ００
１．
７５
３． ７． 3．
5 ５ 5
６５
．
MAX ２ ．
９０
K２G２
●
I
T(AV)
55A, I
T(RMS)
86A, I
TSM
●
di/dt
●
dv/dt
1300A
Internal Configurations
K2
G2
3
2
100A/
μs
1000V/
μs
M ×1
５ ０
K2
G2
A1K2
（K2）
K1
（A2）
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
１０
３±
．
０
０．
５
A1K2
（K2）
K1
（A2） G1
1
3
2
1
１．
９５
４０
．
２８ 4-＃ １ TAB
．
１０
NAME PLATE
PK
K2
3
2
PE
８ ．± ．
００ ０２
1
A1K2
（K2）
K1
（A2） G1
K G
PD
Unit：
A
■Maximum
Ratings
Ratings
Symbol
Item
PK55FG40
PD55FG40
PE55FG40
400
480
400
PK55FG80
PD55FG80
PE55FG80
800
960
800
Conditions
（Tj＝25℃
unless otherwise specified）
PK55FG120
PD55FG120
PE55FG120
1200
1300
1200
PK55FG160
PD55FG160
PE55FG160
1600
1700
1600
Ratings
55
86
1190/1300
7040
10
1
3
10
5
I
G
＝100mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
di
μs
A.C. 1minute
100
2500
−40 to ＋125
−40 to ＋125
2.7（28）
2.7（28）
170
Unit
V
RRM
V
RSM
V
DRM
Symbol
＊Repetitive
Peak Reverse Voltage
＊Non-Repetitive
Peak Reverse Voltage
＊Repetitive
Peak off-state Voltage
Item
V
V
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N½m
（㎏f½B）
g
（
I
T AV）
＊Average
On-state Current
（
I
T RMS）
＊R.M.S.
On-state Current
Single phase, half wave, 180°
conduction, Tc＝81℃
Single phase, half wave, 180°
conduction, Tc＝81℃
1
／
2
I
TSM
I
2
t
P
GM
（AV）
P
G
＊Surge
On-state Current
＊I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
＊Isolation
Breakdown Voltage
（R.M.S）
＊Operating
Junction Temperature
＊Storage
Temperature
Mounting
Torque
Mass
Cycle, 50/60H
Z
, Peak Value, non-repetitive
Value for one cycle surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
Mounting
（M5）
Recommended Value 1.5-2.5（15-25）
Terminal M5） Recommended Value 1.5-2.5（15-25）
（
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
dv/dt
Item
Repetitive Peak off-state Current,max
＊Repetitive
Peak Reverse Current,max
＊On-state
Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
Conditions
Tj＝125℃，V
D
＝V
DRM
Tj＝125℃，V
D
＝V
DRM
I
T
＝165A
V
D
＝6V，I
T
＝1A
V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
1 2
V
DRM
／
Tj＝125℃，V
D
＝
2 3
V
DRM
／
Junction to case
Ratings
15
15
1.6
50
3
0.25
1000
0.50
Unit
mA
mA
V
mA
V
V
V/
μs
℃/W
Rth j-c）＊Thermal Impedance,max
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK(PD,PE)55FG
１０
０
５
０
２
０
１
０
５
２
１
０５
．
０２
．
Gate Characteristics
１０
００
On-State Voltage max
V
FGM
（10V）
P
G
M
（
On-State Current
（A）
５０
０
Gate Voltage
（V）
10
W
２０
０
１０
０
５
０
Ｔ= ５
½２ ℃
Maximum
）
I
FGM
３
（ A）
P
G
（
２℃
５
AV
）
（１
W
）
V
GD
２
０
５０ １０ ２０
０
００ ００
５０ １００
００ ００
１
０
０５
．
1．
０
１５
．
２０
．
２５
．
０１
．
１
０
２
０
５ １０ ２０
０ ０
０
Gate Current
（mA）
Transient Thermal Impedance
θ
（℃/W）
j-c
On-State Voltage
（V）
１０
４０
Surge On-State Current Rating
（Non-Repetitive）
０６
.
０５
.
０４
.
０３
.
０２
.
０１
.
Transient Thermal Impedance
Surge On-State Current
（A）
１０
２０
１０
００
８０
０
６０
０
４０
０
２０
０
０
１
Ｔ = ５ start
½２ ℃
６ H
Z
０
５ H
Z
０
Per One Element
Junction to Case
Per One Element
２
５
１
０
２
０
５
０
１０
０
０
０． １０． ２ ０． ５０． ０ ０． ． ０２ ０５ １ ２
０ ０
０ ０ ０
０ ０
１０．
２ ０ １ ．
５０
．
Time
（cycles）
Time
t
sec）
（
０
５ １
Microcontroller MCU
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