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Datasheet> All Categories > Discrete semiconductor> The transistor> ZTX551STOB
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ZTX551STOB

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size116KB，2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX551STOB Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX551STOB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.35 V

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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX550
ZTX551
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-60
-45
-5
-2
-1
E-Line
TO92 Compatible
ZTX550 ZTX551
-80
-60
UNIT
V
V
V
A
A
W
mW/ °C
°C
1
5.7
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
100
15
150
ZTX550
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
-60
-45
-5
-0.1
-0.1
-0.25
-1.1
300
50
10
150
MAX. MIN.
-80
-60
-5
ZTX551
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
EB
=-4V
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
-0.1
-0.1
-0.35
-1.1
150
µ
A
µ
A
µ
A
V
V
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
3-194

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Description Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? conform to conform to conform to conform to
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 TO-92 COMPATIBLE, E-LINE PACKAGE-3 TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code unknow not_compliant not_compliant _compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-based maximum capacity 25 pF 25 pF 25 pF 25 pF
Collector-emitter maximum voltage 60 V 45 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 15 10 10
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
Maximum power consumption environment 2 W 2 W 2 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface MATTE TIN Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.35 V 0.25 V 0.35 V 0.35 V
Maker Zetex Semiconductors - Zetex Semiconductors Zetex Semiconductors

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