ZTX795ASTZ datasheet, PDF - EEWORLD Datasheet

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ZTX795ASTZ: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size79KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX795ASTZ Overview

Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX795ASTZ Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.3 V

ZTX795ASTZ Preview

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 APRIL 94

FEATURES

* 140 Volt V

CEO

* Gain of 250 at I

=0.2 Amps

* Very low saturation voltage

ZTX795A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

CBO

CEO

EBO

totp

tot

stg

-140

-5

-1

-0.5

1.5

5.7

E-Line

TO92 Compatible

VALUE

UNIT

mW/°C

°C

Operating and Storage Temperature Range

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

BE(on)

300

250

100

3-285

-0.75

800

MIN.

-140

-5

-0.1

-0.3

-0.25

-0.95

TYP.

MAX.

UNIT

CONDITIONS.

=-100

=-10mA*

=-100

=-100V

=-4V

=-100mA, I

=-1mA*

=-200mA, I

=-5mA*

=-500mA, I

=-50mA*

=-500mA, I

=-50mA*

IC=-500mA, V

=-2V*

=-10mA, V

=-2V*

=-200mA, V

=-2V*

=-300mA, V

=-2V*

ZTX795A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

SYMBOL

ibo

obo

off

MIN.

100

225

100

1900

TYP.

MAX.

UNIT

MHz

CONDITIONS.

=-50mA, V

=-5V

f=50MHz

=-0.5V, f=1MHz

=-10V, f=1MHz

=-100mA, I

=-10mA

=-10mA, V

=-50V

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance Junction to Ambient

Junction to Ambient

Junction to Case

SYMBOL

th(j-amb)1

th(j-amb)2

th(j-case)

MAX.

175

116

UNIT

°C/W

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

2.5

200

Max Power Dissipation - (Watts)

Thermal Resistance (°C/W)

D=1 (D.C.)

2.0

D=t

1.5

1.0

100

D=0.5

bie

nt t

0.5

per

at u

D=0.2

D=0.1

Single Pulse

-40 -20

20 40

60 80 100 120 140 160 180 200

0.0001

0.001

0.01

0.1

100

T -Temperature

(°C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-286

ZTX795A

TYPICAL CHARACTERISTICS

1.8

1.6

1.4

=40

=20

=10

1.8

amb

=25°C

1.6

1.4

-55°C

+25°C

+100°C

+175°C

=40

CE(sat)

- (Volts)

CE(sat)

- (Volts)

0.01

0.1

1.2

1.0

0.8

0.6

0.4

0.2

0.001

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

Collector Current (Amps)

CE(sat)

v I

CE(sat)

v I

1.6

1.4

+100°C

+25°C

-55°C

=2V

750

1.6

- Normalised Gain

- Typical Gain

1.4

-55°C

+25°C

+100°C

+175°C

=10

1.2

1.0

0.8

0.6

0.4

0.2

0.01

0.1

250

500

BE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.01

0.1

Collector Current (Amps)

v I

-55°C

+25°C

+100°C

BE(sat)

v I

Single Pulse Test at T

amb

=25°C

1.6

1.4

- Collector Current (Amps)

=2V

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.01

0.1

D.C.

100ms

10ms

1.0ms

0.1ms

0.01

0.001

100

1000

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

3-287

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ZTX795ASTZ Related Products

	ZTX795ASTZ	ZTX795ASTOB	ZTX795ASTOA
Description	Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Reach Compliance Code	_compli	unknown	_compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	140 V	140 V	140 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	100
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V

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