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B9NK90Z

Description
8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size967KB,17 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

B9NK90Z Overview

8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET

B9NK90Z Parametric

Parameter NameAttribute value
Minimum breakdown voltage900 V
Number of terminals2
Processing package descriptionROHS COMPLIANT, D2PAK-3
each_compliYes
EU RoHS regulationsYes
stateNRFND
Rated avalanche energy220 mJ
structureSINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_8 A
Maximum leakage current8 A
Maximum drain on-resistance1.3 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jesd_30_codeR-PSSO-G2
jesd_609_codee3
moisture_sensitivity_levelNOT APPLICABLE
Number of components1
operating modeENHANCEMENT MODE
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_245
larity_channel_typeN-CHANNEL
wer_dissipation_max__abs_160 W
Maximum leakage current pulse32 A
qualification_statusCOMMERCIAL
sub_categoryFET General Purpose Powe
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_30
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureAVALANCHE RATED
STB9NK90Z, STF9NK90Z
STP9NK90Z, STW9NK90Z
N-channel 900 V, 1.1
Ω,
8 A, TO-220, TO-220FP, D
2
PAK, TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
STB9NK90Z
STW9NK90Z
STP9NK90Z
STF9NK90Z
V
DSS
R
DS(on)
max.
I
D
Pw
160 W
3
1
2
3
1
900V
<1.3Ω
8A
160 W
160 W
40 W
TO-220
D²PAK
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
TO-247
2
1
3
3
TO-220FP
1
2
Application
Switching applications
Figure 1.
Internal schematic diagram
D(2)
Description
The SuperMESH™ series is obtained through an
optimization of STMicroelectronics’ well-
established strip-based PowerMESH™ layout. In
addition to pushing on-resistance significantly
lower, it also ensures very good dv/dt capability
for the most demanding applications. This series
complement STs’ full range of high voltage power
MOSFETs.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Marking
B9NK90
F9NK90Z
P9NK90Z
W9NK90Z
Package
D²PAK
TO-220FP
TO-220
TO-247
Tube
Packaging
Tape and reel
Order codes
STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
May 2010
Doc ID 9479 Rev 7
1/17
www.st.com
17

B9NK90Z Related Products

B9NK90Z W9NK90Z P9NK90Z F9NK90Z
Description 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET 8 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Minimum breakdown voltage 900 V 900 V 900 V 900 V
Number of terminals 2 2 2 2
Processing package description ROHS COMPLIANT, D2PAK-3 ROHS COMPLIANT, D2PAK-3 ROHS COMPLIANT, D2PAK-3 ROHS COMPLIANT, D2PAK-3
each_compli Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
state NRFND NRFND NRFND NRFND
Rated avalanche energy 220 mJ 220 mJ 220 mJ 220 mJ
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
drain_current_max__abs___id_ 8 A 8 A 8 A 8 A
Maximum leakage current 8 A 8 A 8 A 8 A
Maximum drain on-resistance 1.3 ohm 1.3 ohm 1.3 ohm 1.3 ohm
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
jesd_30_code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
jesd_609_code e3 e3 e3 e3
moisture_sensitivity_level NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Number of components 1 1 1 1
operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 245 245 245 245
larity_channel_type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
wer_dissipation_max__abs_ 160 W 160 W 160 W 160 W
Maximum leakage current pulse 32 A 32 A 32 A 32 A
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe
surface mount YES YES YES YES
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
ime_peak_reflow_temperature_max__s_ 30 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
dditional_feature AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
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