CEM8401
Feb. 2003
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V , 7.5A , R
DS(ON)
=21m
Ω
@V
GS
=10V.
R
DS(ON)
=30m
Ω
@V
GS
=4.5V.
-30V , -5.0A , R
DS(ON)
=50m
Ω
@V
GS
=-10V.
R
DS(ON)
=75m
Ω
@V
GS
=-4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
SO-8
1
1
2
3
S
2
4
D
1
8
D
1
7
D
2
6
D
2
5
S
1
G
1
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
-Pulsed
Drain-Source Diode Forward Current
a
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
N-Channel P-Channel
30
20
7.5
30
2.3
2.0
-55 to 150
-30
20
5.0
20
-2.3
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
62.5
C/W
5-190
CEM8401
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
C
ISS
C
OSS
C
RSS
c
Symbol
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7.4A
V
DS
= 5V, V
GS
= 10V
V
DS
= 15V, I
D
= 9A
Min Typ
C
Max Unit
5
30
1
V
µA
100 nA
1
18
25
15
16
857
343
105
3
21
30
V
mΩ
mΩ
A
S
P
F
P
F
P
F
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 15V,
I
D
= 3.5A,
V
GS
= 10V,
R
GEN
= 6
Ω
22
34
43
18
28
45
70
90
35
35
ns
ns
ns
ns
nC
nC
nC
V
DS
=15V, I
D
= 4.7A,
V
GS
=10V
5-191
4
7.5
CEM8401
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
C
ISS
C
OSS
C
RSS
c
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= -30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.2A
V
GS
= -4.5V, I
D
= -3.4A
V
DS
= -5V, V
GS
= -10V
V
DS
= -15V, I
D
= -4.2A
Min Typ
C
Max Unit
-30
-1
V
µA
100 nA
-1
40
65
-15
7
1124
488
150
-3
50
75
V
mΩ
mΩ
A
S
P
F
P
F
P
F
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= -15V,
I
D
= -4.2A,
V
GEN
= -10V,
R
GEN
= 6
Ω
21
23
33
60
30
40
45
65
100
36
ns
ns
ns
ns
nC
nC
nC
V
DS
=-15V, I
D
= -4.2A,
V
GS
=-10V
5-192
4
7.5
CEM8401
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is = 5.1A N-Ch
V
GS
= 0V, Is =-3.6A P-Ch
Min Typ Max Unit
5
0.8
-0.8
1.2
-1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
20
VGS=10 thru 4V
30
-55 C
24
16
I
D
, Drain Current (A)
12
I
D
, Drain Current (A)
18
8
V
GS
=3V
12
25 C
6
0
Tj=125 C
4
0
0
0.5
1.0
1.5
2.0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON)
, Normalized
R
DS(ON)
,
On-Resistance(Ohms)
1200
1000
Ciss
Figure 2. Transfer Characteristics
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25
0
25
50
75
100 125 150
I
D
=9.0A
V
GS
=10V
C, Capacitance (pF)
800
600
Coss
400
200
0
0
5
10
15
20
25
30
Crss
V
DS
, Drain-to Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
5-193
CEM8401
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25 50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
1.15
I
D
=250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
5
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
25
Figure 6. Breakdown Voltage Variation
with Temperature
20
10
V
GS
=0V
g
FS
, Transconductance (S)
15
Is, Source-drain current (A)
20
20
10
5
V
DS
=15V
0
0
5
10
15
1
0.1
0.4
0.6
0.8
1.0
1.2
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
10
V
GS
, Gate to Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
8
6
4
2
0
V
DS
=15V
I
D
=4.7A
I
D
, Drain Current (A)
10
1
RD
O
S(
N)
Lim
it
1m
s
10
10
1s
ms
0m
s
10
0
10
DC
s
10
-1
-2
10
T
A
=25 C
Tj=150 C
Single Pulse
10
1
10
0
10
1
0
8
16
24
32
10
-1
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
5-194
Figure 10. Maximum Safe
Operating Area
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