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BA12001B

Description
0.35 A, 55 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size106KB,7 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BA12001B Overview

0.35 A, 55 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR

BA12001B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIP
package instructionDIP-16
Contacts16
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.35 A
Collector-emitter maximum voltage55 V
ConfigurationCOMPLEX
Minimum DC current gain (hFE)1000
JESD-30 codeR-PDIP-T16
JESD-609 codee3/e2
Number of components7
Number of terminals16
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN/TIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
High voltage, high current Darlington
transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.
!Applications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements
!Features
1) High output current. (I
OUT
=500mA Max.)
2) High output sustain voltage. (V
OUT
=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the “Reference items when using in application.” )
!
Block diagram
IN1 1
16 OUT1
IN2 2
15 OUT2
IN3 3
14 OUT3
IN4 4
13 OUT4
IN5 5
12 OUT5
IN6 6
11 OUT6
IN7 7
10 OUT7
GND 8
9
COM

BA12001B Related Products

BA12001B BA12003BF BA12004B
Description 0.35 A, 55 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR 0.35 mA, 55 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR 0.35 A, 55 V, 7 CHANNEL, NPN, Si, POWER TRANSISTOR
Is it Rohs certified? conform to conform to conform to
Parts packaging code DIP SOIC DIP
package instruction DIP-16 SOP-16 DIP-16
Contacts 16 16 16
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.35 A 0.00035 A 0.35 A
Collector-emitter maximum voltage 55 V 55 V 55 V
Configuration COMPLEX COMPLEX COMPLEX
Minimum DC current gain (hFE) 1000 1000 1000
JESD-30 code R-PDIP-T16 R-PDSO-G16 R-PDIP-T16
Number of components 7 7 7
Number of terminals 16 16 16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED 260
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES NO
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 NOT SPECIFIED 10
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it lead-free? Lead free - Lead free
JESD-609 code e3/e2 - e3/e2
Terminal surface TIN/TIN COPPER - TIN/TIN COPPER
Maker - ROHM Semiconductor ROHM Semiconductor
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