BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
High voltage, high current Darlington
transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.
!Applications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements
!Features
1) High output current. (I
OUT
=500mA Max.)
2) High output sustain voltage. (V
OUT
=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the “Reference items when using in application.” )
!
Block diagram
IN1 1
16 OUT1
IN2 2
15 OUT2
IN3 3
14 OUT3
IN4 4
13 OUT4
IN5 5
12 OUT5
IN6 6
11 OUT6
IN7 7
10 OUT7
GND 8
9
COM
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
Internal circuit configuration
COM
COM
OUT
IN
OUT
IN
2.7kΩ
7.2kΩ
7.2kΩ
3kΩ
GND
3kΩ
GND
Fig.1
BA12001B
Fig.2
BA12003B / BF
COM
IN
10.5kΩ
OUT
7.2kΩ
3kΩ
GND
Fig.3
BA12004B
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Power supply voltage
Input voltage
Input current
Output current
Ground pin current
Power dissipation
DIP package
SOP package
other than BA12001B
BA12001B
Symbol
V
CE
V
IN
I
IN
I
OUT
I
GND
Pd
V
R
I
F
Topr
Tstg
Limits
60
−0.5∼+30
25
500
2.3
∗
1
1250
∗
2
625
∗
3
60
500
−25∼+75
−55∼+150
Unit
V
V
mA / unit
mA / unit
A
mW
V
mA
˚C
˚C
Diode reverse voltage
Diode forward current
Operating temperature
Storage temperature
∗
1 Pulse width
≤
20ms, duty cycle
≤
10%, same current for all 7 circuits
∗
2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .
∗
3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .
!
Recommended operating conditions
(Ta=25°C)
Parameter
Output current
Power supply voltage
Input voltage (excluding BA12001B)
Input current (BA12001B only)
Symbol
I
OUT
V
CE
V
IN
I
IN
Min.
−
−
−
−
Typ.
−
−
−
−
Max.
350
55
30
25
Unit
mA
V
V
mA / unit
Conditions
Fig.9, 10
−
−
−
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
Electrical characteristics
(Ta=25°C)
Parameter
Output leakage current
DC current transfer ratio
Symbol
I
L
h
FE
Min.
−
1000
−
Typ.
0
2400
0.94
Output saturation voltage
V
CE(sat)
1.14
1.46
BA12003B / BF
BA12004B
Input voltage
BA12003B / BF
BA12004B
BA12003B / BF
BA12004B
Input current
BA12003B / BF
BA12004B
Diode reverse current
Diode forward voltage
Input capacitance
V
IN
V
IN
V
IN
−
−
−
−
−
−
−
1.75
2.53
1.91
2.75
2.17
3.27
0.90
0.39
0
1.73
30
Max.
10
−
1.1
1.3
1.6
2
5
2.4
6
3.4
8
1.35
0.5
50
2
−
µA
V
pF
mA
V
IN
= 3.85V
V
IN
= 5V
V
R
= 60V
I
F
= 350mA
V
IN
= 0V, f = 1MHz
V
V
CE
= 2V, I
OUT
= 200mA
V
V
CE
= 2V, I
OUT
= 100mA
V
Unit
µA
V
V
CE
= 60V
V
CE
= 2V, I
OUT
= 350mA
I
OUT
= 100mA, I
IN
= 250µA
I
OUT
= 200mA, I
IN
= 350µA
I
OUT
= 350mA, I
IN
= 500µA
Conditions
V
V
CE
= 2V, I
OUT
= 350mA
I
IN
I
R
V
F
C
IN
Note: Input voltage and input current for BA12001 vary based on external resistor.
!
Measurement circuits
(1) Output leakage current I
L
OPEN
(2) DC current transfer ratio
Output saturation voltage
OPEN
h
FE
= I
O
I
I
V
CE
(sat)
(3) Input voltage V
IN
OPEN
OPEN
I
L
I
O
I
I
V
CE
I
O
V
I
V
CE
(sat)
V
CE
(4) Input current I
IN
OPEN
(5) Diode reverse current
I
R
(6) Diode forward voltage I
F
I
R
OPEN
OPEN
V
I
OPEN
OPEN
V
R
OPEN
I
F
V
F
(7) Input capacitance C
IN
OPEN
f
Capacitance
bridge
L
O
H
I
OPEN
TEST SIGNAL LEVEL 20mVrms
V
I
Fig.4
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
Application example
RY
LED
(1) Relay driver
(2) LED driver
Fig.5
!
Application notes
The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or
TTL.
A current limiting resistor needs to be connected in series with the input.
The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input
current to a stable value, resistors are connected in series to each of the inputs.
The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order
to limit the input current to a stable value, resistors are connected in series to each of the inputs.
The load for each of these products should be connected between the driver output and the power supply. To protect the
IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply.
Fig.6 shows the configuration of the on-chip diode for surge absorption.
In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the
substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical
construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate
measures regarding the thermal characteristics of the design considering the current that will be handled.
Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing
diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low
foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current.
OUT
COM
In-flow current to the surge-absorbing diode
N
+
P
+
IDi
N
+
ISO
Isub
N-well
B/L
P-sub
N
+
ISO
P
P
Fig.6 Vertical construction of the surge-absorbing diode
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
Electrical characteristic curves
1400
OUTPUT CURRENT : I
O
(mA)
500
All series
OUTPUT CURRENT : I
OUT
(mA)
500
When all circuits are on
400
350
300
Ta = 25˚C
200
Ta = 75˚C
100
110mA
64mA
10%
20%
All series
POWER DISSIPATION : Pd (mW)
1250 Other than BA12003BF
1200
1000
800
625 BA12003BF
600
400
200
0
400
300
2ch
3ch
200
4ch
5ch
6ch
7ch
100
0
25
50
75
100
125
150
10 20 30 40 50 60 70 80 90 100
DUTY CYCLE : (%)
0
20
40
60
80
100
AMBIENT TEMPERATURE : Ta (˚C)
DUTY CYCLE (%)
Fig.7 Power dissipation vs. ambient
temperature
Fig.8 Output conditions (I)
Fig.9 Output conditions (II)
500
The shaded range should
never be exceeded under
any circumstances
5000
DC CURRENT GAIN : h
FE
Ta = 25˚C
V
CE
= 2.0V
OUTPUT CURRENT : I
OUT
(mA)
500
I
IN
= 250µA
400
OUTPUT CURRENT: I
OUT
(mA)
400
350
300
2000
1000
500
300
Ta =
−30˚C
Ta = 25˚C
100
Ta = 80˚C
200
Max. usage conditions
200
100
Usage conditions range
200
100
10
0
10
20
30
40
50
20
50
100
200
500
1000
0
0
0.5
1.0
1.5
2.0
2.5
SUPPLY VOLTAGE: V
CC
(V)
OUTPUT CURRET : I
OUT
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Usage conditions range
per circuit
Fig.11 DC current transfer ratio
vs. output current
Fig.12 Output current vs. voltage
between collector and emitter
500
I
IN
= 350µA
500
I
IN
= 500
µ
A
OUTPUT CURRENT : I
OUT
(mA)
20
OUTPUT CURRENT : I
OUT
(mA)
400
400
INPUT CURRENT : I
IN
(mA)
15
Ta =
−25˚C
Ta = 25˚C
Ta = 75˚C
300
Ta =
−30˚C
300
Ta =
−30˚C
Ta = 25˚C
100
Ta = 80˚C
0
0
0.5
1.0
1.5
2.0
2.5
10
200
200
Ta = 25˚C
5
100
Ta = 80˚C
0
10
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
INPUT VOLTAGE : V
IN
(V)
Fig.13 Output current vs. voltage
between collector and emitter
Fig.14 Output current vs. voltage
between collector and emitter
Fig.15 Input current vs. input
voltage (BA12003B / BF)
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