BCV71 datasheet, PDF - EEWORLD Datasheet

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BCV71: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerDiodes Incorporated

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BCV71 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCV71 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz

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SOT23 NPN SILICON PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 FEBRUARY 95

BCV72 IS OBSOLETE

PLEASE USE BC846B

BCV71

BCV72

C

B

E

PARTMARKING DETAIL:

BCV71

BCV72

BCV71R

BCV72R

K7

K8

K6

K9

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector- base

Cut-Off Current

Base - Emitter Voltage

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer

Ratio

BCV71

BCV72

SYMBOL

I

CBO

V

BE

V

CE(sat)

V

BE(sat)

h

FE

550

120

210

750

850

110

200

Transition Frequency

Collector Capacitance

Noise Figure

f

T

C

TC

N

90

150

300

4

10

220

450

MHz

pF

dB

MIN.

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

100

10

750

250

VALUE

80

60

5

200

100

330

-55 to +150

UNIT

nA

mA

mV

SOT23

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

CONDITIONS.

V

CB

=20V

V

CB

=20V,T

amb

=100°C

I

C

=2mA, V

CE

= 5V

I

C

=10mA, I

B

= 0.5mA

I

C

= 50mA, I

B

=2.5mA

I

C

=10mA, I

B

=0.5mA

I

C

=50mA, I

B

=2.5mA

I

C

=10mA, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

f = 35MHz

I

E

=I

e

=0, V

CB

= 10V

f= 1MHz

I

C

= 200

µ

A, V

CE

= 5V

R

S

=2K

Ω

, f=1KHz

B= 200Hz

Spice parameter data is available upon request for this device

PAGE NO

BCV71 Related Products

	BCV71	BCV71R	BCV72R
Description	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Parts packaging code	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	110	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz
Base Number Matches	-	1	1

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