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ZTX576K

Description
Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size132KB,6 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

ZTX576K Overview

Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX576K Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

ZTX576K Related Products

ZTX576K ZTX576M1 ZTX576Q ZTX576L
Description Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction IN-LINE, R-PSIP-W3 SMALL OUTLINE, R-PSSO-G3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Contacts 3 3 3 3
Reach Compliance Code unknow unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 200 V 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PSIP-W3 R-PSSO-G3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES NO NO
Terminal surface MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form WIRE GULL WING WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40 40
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
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