ZTX689BSTZ datasheet, PDF - EEWORLD Datasheet

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ZTX689BSTZ: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size90KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX689BSTZ Overview

Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX689BSTZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 MAY 94

FEATURES

* 20 Volt V

CEO

* Gain of 400 at I

C

=2 Amps

* Very low saturation voltage

APPLICATIONS

* Darlington replacement

* Flash gun convertors

* Battery powered circuits

* Motor drivers

ZTX689B

C

B

E

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

VALUE

20

5

8

3

1.5

1

5.7

-55 to +200

UNIT

V

A

W

mW/°C

°C

Operating and Storage Temperature Range

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

500

400

150

3-235

MIN.

20

5

0.1

0.5

0.9

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=16V

V

EB

=4V

I

C

=0.1A, I

B

=0.5mA*

I

C

=2A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

IC=1A, V

CE

=2V*

I

C

=0.1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

I

C

=6A, V

CE

=2V*

V

ZTX689BSTZ Related Products

	ZTX689BSTZ	ZTX689BSTOA	ZTX689B	ZTX689BSTOB
Description	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Contacts	3	3	3	3
Reach Compliance Code	compli	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	150	150	150	150
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3	e3	e3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	MATTE TIN	Matte Tin (Sn)	MATTE TIN
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz
Humidity sensitivity level	-	1	NOT APPLICABLE	1

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