ZTX853STOB datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> ZTX853STOB

Preview

ZTX853STOB: DescriptionPower Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size86KB，3 Pages; ManufacturerDiodes Incorporated

Download Datasheet Parametric Compare View All

ZTX853STOB Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	ZTX853STOB	-	-	View	Buy Now

ZTX853STOB Overview

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX853STOB Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz

Preview

Download Datasheet

View All

NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FEATURES

* 100 Volt V

CEO

* 4 Amps continuous current

* Up to 10 Amps peak current

* Very low saturation voltage

* P

tot

=1.2 Watts

ZTX853

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:Tstg

200

100

6

10

4

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltag

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

SYMBOL

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CER

R

≤

1K

Ω

I

EBO

V

CE(sat)

14

100

160

960

3-297

MIN.

200

100

6

TYP.

300

120

8

50

1

50

1

10

50

150

200

1100

MAX.

UNIT

V

nA

mV

CONDITIONS.

I

C

=100

µ

A

IC=1

µ

A, RB

≤

1K

Ω

I

C

=10mA*

I

E

=100

µ

A

V

CB

=150V

V

CB

=150V, T

amb

=100°C

V

CB

=150V

V

CB

=150V, T

amb

=100°C

V

EB

=6V

I

C

=0.1A, I

B

=5mA

I

C

=2A, I

B

=100mA

I

C

=4A, I

B

=400mA*

I

C

=4A, I

B

=400mA*

µ

A

µ

A

V

BE(sat)

ZTX853STOB Related Products

	ZTX853STOB	ZTX853STZ
Description	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3
Reach Compliance Code	unknow	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	MATTE TIN	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz

Recommended Resources

AD524J type thermocouple cold junction compensation temperature measurement circuit

Thyristor overcurrent protection circuit 5

Xiangxuehai brand BCD-245 refrigerator circuit

UD-8 resistive humidity sensor application circuit

Parallel switching power supply circuit diagram

820e computer motherboard circuit diagram_53

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components