ZVP4525G
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-250V; R
DS(ON)
=14V; I
D
=-265mA
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of telecom and general high voltage circuits.
SOT89 and SOT23-6 versions are also available.
FEATURES
•
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
Complementary N-channel type ZVN4525G
•
SOT223 package
SOT223
APPLICATIONS
•
Earth recall and dialling switches
•
Electronic hook switches
•
High voltage power MOSFET drivers
•
Telecom call routers
•
Solid state relays
ORDERING INFORMATION
DEVICE
ZVP4525GTA
ZVP4525GTC
REEL SIZE
7”
13”
TAPE WIDTH
8mm embossed
8mm embossed
QUANTITY
PER REEL
1000 units
4000 units
D
S
D
G
DEVICE MARKING
•
ZVP4525G
TOP VIEW
ISSUE 4 - JUNE 2004
1
SEMICONDUCTORS
ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
(V
GS
=10V; TA=25°C)
(a)
(V
GS
=10V; TA=70°C)
(a)
SYMBOL
V
DSS
V
GS
I
D
I
D
I
DM
I
S
I
SM
P
D
LIMIT
250
±40
-265
-212
-1
-0.75
-1
2
16
-55 to +150
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Operating and storage temperature range
T
j
:
T
stg
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
63
26
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High voltage applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 4 - JUNE 2004
SEMICONDUCTORS
2
ZVP4525G
CHARACTERISTICS
ISSUE 4 - JUNE 2004
3
SEMICONDUCTORS
ZVP4525G
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
(1)
V
(BR)DSS
-250
I
DSS
I
GSS
V
GS(th)
R
DS(on)
-0.8
-285
-30
±1
-1.5
10
13
80
200
-500
±100
-2.0
14
18
V
nA
nA
V
Ω
Ω
mS
I
D
=-1mA, V
GS
=0V
V
DS
=-250V, V
GS
=0V
V
GS
=±40V, V
DS
=0V
I =-1mA, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-200mA
V
GS
=-3.5V,
I
D
=-100mA
V
DS
=-10V,I
D
=-0.15A
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS
Forward transconductance
(3)
DYNAMIC
(3)
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
g
fs
C
iss
C
oss
C
rss
73
12.8
3.91
pF
pF
pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
1.53
3.78
17.5
7.85
2.45
0.22
0.45
3.45
0.31
0.63
ns
ns
ns
ns
nC
nC
nC
V
DS
=-25V,V
GS
=-10V,
I
D
=-200mA(refer to
test circuit)
V
DD
=-30V, I
D
=-200mA
R
G
=50Ω, V
GS
=-10V
(refer to test circuit)
V
SD
t
rr
Q
rr
205
21
0.97
290
29
V
ns
nC
T
j
=25°C, I
S
=-200mA,
V
GS
=0V
T
j
=25°C, I
F
=-200mA,
di/dt= 100A/µs
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - JUNE 2004
SEMICONDUCTORS
4
ZVP4525G
TYPICAL CHARACTERISTICS
ISSUE 4 - JUNE 2004
5
SEMICONDUCTORS
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