Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” can cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
4.
JA
is measured with the component mounted on an evaluation PC board in free air.
5. For
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
6.
JA
is measured with the component mounted on a high-effective thermal conductivity test board in free air. See
TB379
for details.
Electrical Specifications
PARAMETER
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
(BR)CES
Emitter to Base Breakdown
Voltage, V
(BR)EBO
Collector-Cutoff-Current, I
CEO
Collector-Cutoff-Current, I
CBO
Collector to Emitter Saturation
Voltage, V
CE(SAT)
Base to Emitter Voltage, V
BE
DC Forward-Current Transfer
Ratio, h
FE
Early Voltage, V
A
Base to Emitter Voltage Drift
Collector to Collector Leakage
T
A
= +25°C
DIE
TEST CONDITIONS
MIN
TYP
MAX
MIN
SOIC, QFN
TYP
MAX
UNIT
I
C
= 100µA, I
E
= 0
I
C
= 100µA, I
B
= 0
I
C
= 100µA, Base Shorted to Emitter
I
E
= 10µA, I
C
= 0
V
CE
= 6V, I
B
= 0
V
CB
= 8V, I
E
= 0
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA
I
C
= 10mA, V
CE
= 2V
I
C
= 1mA, V
CE
= 3.5V
I
C
= 10mA
12
8
10
5.5
-
-
-
-
40
20
-
-
18
12
20
6
2
0.1
0.3
0.85
130
50
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
12
8
10
5.5
-
-
-
-
40
20
-
-
18
12
20
6
2
0.1
0.3
0.85
130
50
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
V
V
V
V
nA
nA
V
V
V
mV/°C
pA
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f
T
Current Gain-Bandwidth
Product
Power Gain-Bandwidth Product,
f
MAX
Base to Emitter Capacitance
Collector to Base Capacitance
f = 1.0GHz, V
CE
= 5V,
I
C
= 5mA, Z
S
= 50Ω
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
V
BE
= -3V
V
CB
= 3V
-
-
-
-
-
-
3.5
5.5
8
6
200
200
-
-
-
-
-
-
-
-
-
-
-
-
3.5
5.5
8
2.5
500
500
-
-
-
-
-
-
dB
GHz
GHz
GHz
fF
fF
FN3076 Rev.16.00
Jan 24, 2019
Page 4 of 16
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
PARAMETER
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V
(BR)CBO
Collector to Emitter Breakdown
Voltage, V
(BR)CEO
Collector to Emitter Breakdown
Voltage, V
(BR)CES
Emitter to Base Breakdown
Voltage, V
(BR)EBO
Collector Cutoff Current, I
CEO
Collector Cutoff Current, I
CBO
Collector to Emitter Saturation
Voltage, V
CE(SAT)
Base to Emitter Voltage, V
BE
DC Forward-Current Transfer
Ratio, h
FE
Early Voltage, V
A
Base to Emitter Voltage Drift
Collector to Collector Leakage
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f
T
Current Gain-Bandwidth
Product
Power Gain-Bandwidth
Product
Base to Emitter Capacitance
Collector to Base Capacitance
f = 1.0GHz, V
CE
= -5V,
I
C
= -5mA, Z
S
= 50
I
C
= -1mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
V
BE
= 3V
V
CB
= -3V
-
-
-
-
-
-
3.5
2
5.5
3
200
300
-
-
-
-
-
-
-
-
-
-
-
-
3.5
2
5.5
2
500
600
-
-
-
-
-
-
dB
GHz
GHz
GHz
fF
fF
I
C
= -100µA, I
E
= 0
I
C
= -100µA, I
B
= 0
I
C
= -100µA, Base Shorted to Emitter
I
E
= -10µA, I
C
= 0
V
CE
= -6V, I
B
= 0
V
CB
= -8V, I
E
= 0
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA
I
C
= -10mA, V
CE
= -2V
I
C
= -1mA, V
CE
= -3.5V
I
C
= -10mA
10
8
10
4.5
-
-
-
-
20
10
-
-
15
15
15
5
2
0.1
0.3
0.85
60
20
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
10
8
10
4.5
-
-
-
-
20
10
-
-
15
15
15
5
2
0.1
0.3
0.85
60
20
-1.5
1
-
-
-
-
100
10
0.5
0.95
-
-
-
-
V
mV/°C
pA
V
V
V
V
nA
nA
V
V
T
A
= +25°C
DIE
TEST CONDITIONS
MIN
TYP
MAX
MIN
SOIC, QFN
TYP
MAX
UNITS
Common Emitter S-Parameters of NPN 3µmx50µm Transistor
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