Internally synchronized output buffer enable eliminates the
u
Single R/W (READ/WRITE) control pin
u
Positive clock-edge triggered address, data, and control
u
u
u
u
u
u
u
need to control
OE
cycles
(3.8 ns Clock-to-Data Access)
Preliminary
IDT71T65602
IDT71T65802
Description
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW
1
-
BW
4
) control (May tie active)
Three chip enables for simple depth expansion
2.5V power supply (±5%)
2.5V I/O Supply (V
DDQ
)
Power down controlled by ZZ input
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
The IDT71T65602/5802 are 2.5V high-speed 9,437,184-bit
(9 Megabit) synchronous SRAMs. They are designed to eliminate dead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBT
TM
, or Zero
Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71T65602/5802 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable
CEN
pin allows operation of the IDT71T65602/5802
to be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory operation can be initiated.
Pin Description Summary
A
0
-A
18
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
N/A
N/A
N/A
N/A
Asynchronous
Synchronous
Static
Static
5302 tbl 01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.
1. Pins 14, 16, and 66 do not have to be connected directly to V
DD
as long as the input voltage is
≥
V
IH
.
2. Pin 84 is reserved for a future 16M.
3. DNU = Do not use. Pins 38, 39, 42 and 43 are reserved for respective JTAG pins TMS, TDI, TDO and TCK. Within the current version these pins can be left
unconnected, tied LOW (V
SS
), or tied HIGH (V
DD
).
6.42
4
A
10
A
11
A
12
A
13
A
14
A
15
A
16
IDT71T65602, IDT71T65802, 256K x 36, 512K x 18, 2.5V Synchronous ZBT SRAMs with
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