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IXTQ32P20T

Description
Power Field-Effect Transistor, 32A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size239KB,7 Pages
ManufacturerIXYS
Environmental Compliance
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IXTQ32P20T Overview

Power Field-Effect Transistor, 32A I(D), 200V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

IXTQ32P20T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeTO-3P
package instructionPLASTIC, TO-3P, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)1000 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)32 A
Maximum drain current (ID)32 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)300 W
Maximum pulsed drain current (IDM)96 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
TrenchP
TM
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
V
DSS
I
D25
R
DS(on)
=
=
- 200V
- 32A
130mΩ
Ω
TO-220AB (IXTP)
TO-3P (IXTQ)
G
S
D (Tab)
G
DS
D (Tab)
G
D
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
- 200
- 200
+
15
+
25
- 32
- 96
- 32
1
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
g
g
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low R
DS(ON)
and Q
G
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
260
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P)
1.13 / 10
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= - 250μA
V
DS
= V
GS
, I
D
= - 250μA
V
GS
=
±
15V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
- 200
- 2.0
- 4.0
V
V
±100
nA
- 25
μA
-1.25 mA
130 mΩ
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1
© 2013 IXYS CORPORATION, All Rights Reserved
DS100288B(01/13)

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