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MC-45V8AD641KS-A75

Description
Synchronous DRAM Module, 8MX64, 5.4ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
Categorystorage    storage   
File Size140KB,16 Pages
ManufacturerNEC Electronics
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MC-45V8AD641KS-A75 Overview

Synchronous DRAM Module, 8MX64, 5.4ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144

MC-45V8AD641KS-A75 Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeDIMM
package instructionDIMM,
Contacts144
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time5.4 ns
JESD-30 codeR-XDMA-N144
memory density536870912 bi
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals144
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-45V8AD641KS
8M-WORD BY 64-BIT
VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Description
The MC-45V8AD641KS is a 8,388,608 words by 64 bits virtual channel synchronous dynamic RAM module (small
outline DIMM) on which 8 pieces of 64M virtual channel SDRAM :
µ
PD4565161 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
8,388,608 words by 64 bits organization
Clock frequency and access time from CLK
Part number
Read
Clock
Access
time
from CLK
(MAX.)
Prefetch
Maximum supply current
Operating
Restore
Channel
read / write
(Burst)
480 mA
400 mA
340 mA
480 mA
400 mA
340 mA
Auto
640 mA
560 mA
540 mA
640 mA
560 mA
540 mA
4 mA
Refresh
Self
8 mA
latency frequency
(MAX.)
MC-45V8AD641KS-A75
MC-45V8AD641KS-A10
MC-45V8AD641KS-A15
2
133 MHz
100 MHz
5.4 ns
6 ns
12 ns
5.4 ns
6 ns
12 ns
440 mA
420 mA
380 mA
440 mA
420 mA
380 mA
1
2
67 MHz
133 MHz
100 MHz
MC-45V8AD641KS-A75L
MC-45V8AD641KS-A10L
MC-45V8AD641KS-A15L
1
67 MHz
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Dual internal banks controlled by BA0 (Bank Select)
Programmable burst-length : 1, 2, 4, 8 or 16
Programmable wrap sequence : Sequential or Interleave
Prefetch read latency : 4
Auto precharge and without auto precharge
Auto refresh and self refresh
Single 3.3 V
±
0.3 V power supply
LVTTL compatible
4,096 refresh cycles / 64 ms
144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
Unbuffered type
Serial PD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M13836EJ4V0DS00 (4th edition)
Date Published June 1999 NS CP (K)
Printed in Japan
The mark
shows major revised points.
©
1998

MC-45V8AD641KS-A75 Related Products

MC-45V8AD641KS-A75 MC-45V8AD641KS-A10 MC-45V8AD641KS-A10L MC-45V8AD641KS-A75L MC-45V8AD641KS-A15 MC-45V8AD641KS-A15L
Description Synchronous DRAM Module, 8MX64, 5.4ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144 Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144 Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144 Synchronous DRAM Module, 8MX64, 5.4ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144 Synchronous DRAM Module, 8MX64, 12ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144 Synchronous DRAM Module, 8MX64, 12ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
Parts packaging code DIMM DIMM DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM, DIMM, DIMM, DIMM, DIMM,
Contacts 144 144 144 144 144 144
Reach Compliance Code unknow unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST DUAL BANK PAGE BURST
Maximum access time 5.4 ns 6 ns 6 ns 5.4 ns 12 ns 12 ns
JESD-30 code R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
memory density 536870912 bi 536870912 bit 536870912 bit 536870912 bit 536870912 bit 536870912 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64 64 64 64 64
Number of functions 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1
Number of terminals 144 144 144 144 144 144
word count 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 8MX64 8MX64 8MX64 8MX64 8MX64 8MX64
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM DIMM DIMM
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO NO NO
technology MOS MOS MOS MOS MOS MOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
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