BA159 datasheet, PDF - EEWORLD Datasheet

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BA159: Description1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size179KB，2 Pages; ManufacturerGood-Ark; Websitehttp://www.goodark.com/

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BA159 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum reverse recovery time	0.5000 us
Maximum repetitive peak reverse voltage	1000 V
Maximum average forward current	1 A

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BA157 THRU BA159

FAST SWITCHING PLASITC RECTIFIER

Reverse Voltage -

400 to 1000 Volts

Forward Current -

1.0 Ampere

Features

Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

High surge current capabability

Void-free plastic package

Fast switching for high efficiency

High temperature soldering guaranteed:

350 /10 seconds, 0.375 (9.5mm) lead length,

5 lbs. (2.3Kg) tension

Mechanical Data

Case:

DO-41 molded plastic body

Terminals:

Plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.012 ounce, 0.33 gram

DIM ENSIONS

DIM

inches

Min.

0.165

0.079

0.028

1.000

Max.

0.205

0.106

0.034

Min.

4.2

2.0

0.71

25.40

Max.

5.2

2.7

0.86

Note

Maximum Ratings and Electrical Characteristics

Ratings at 25

ambient temperature unless otherwise specified.

Symbols

BA157

BA158

BA159

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=50

Peak forward surge current

8.3mS single half sine-wave superimposed

on rated load at T

=25

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

at rated DC blocking voltage

=25

RRM

RMS

(AV)

FSM

400

280

400

600

420

600

1.0

35.0

1.3

5.0

150

15.0

-65 to +125

1000

700

1000

Volts

Amp

Amps

Volts

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Maximum operating junction temperature

Maximum storage temperature

250

STG

Notes:

(1) Reverse recovery test conditions: I

=0.5A, I

=1.0A, I

=0.25A

(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts

(3) Thermal resistance from junction to lead at 0.375 (9.5mm) lead length P.C.B. mounted

BA159 Related Products

	BA159	BA157	BA158
Description	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL

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