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BA159

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size272KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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BA159 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

BA159 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
DC COMPONENTS CO., LTD.
R
BA157
THRU
BA159
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER
VOLTAGE RANGE - 400 to 1000 Volts
CURRENT - 1.0 Ampere
FEATURES
*
*
*
*
*
*
Fast switching
Low leakage
Low forward voltage drop
High current capability
High surge capability
High reliability
DO-41
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Mounting position: Any
Weight: 0.33 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Full Cycle
Average, .375*(9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
BA157
400
280
400
BA158
600
420
600
1.0
30
1.3
5.0
BA159
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
uAmps
I
R
100
trr
C
J
T
J
, T
STG
150
250
15
-65 to + 150
500
nSec
pF
0
C
82

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BA159 BA157 BA158
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
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