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PESD5V0L7BAS;
PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode
arrays
Rev. 4 — 23 June 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic
packages designed for the protection of up to seven transmission or data lines from
damage caused by ElectroStatic Discharge (ESD) and other transients.
Table 1.
Product overview
Package
Name
PESD5V0L7BAS
PESD5V0L7BS
TSSOP8
SO8
NXP
SOT505-1
SOT96-1
Type number
1.2 Features and benefits
ESD protection of up to seven lines
Low diode capacitance
Max. peak pulse power: P
PP
= 35 W
Low clamping voltage: V
CL
= 17 V
Ultra low leakage current: I
RM
= 3 nA
ESD protection of up to 10 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 2.5 A
1.3 Applications
Computers and peripherals
Communication systems
Audio and video equipment
High-speed data lines
Parallel ports
1.4 Quick reference data
Table 2.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
Conditions
Min
-
-
Typ
-
8
Max
5
10
Unit
V
pF
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
2. Pinning information
Table 3.
Pin
TSSOP8
1
2
3
4
5
6
7
8
SO8
1
2
3
4
5
6
7
8
cathode 1
cathode 2
cathode 3
cathode 4
cathode 5
cathode 6
cathode 7
cathode 8
sym005
Pinning
Description
cathode 1
cathode 2
cathode 3
cathode 4
cathode 5
cathode 6
cathode 7
cathode 8
sym005
Simplified outline
Graphic symbol
8
5
1
2
3
8
7
6
5
1
4
4
8
5
1
2
3
4
8
7
6
5
1
4
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0L7BAS
PESD5V0L7BS
TSSOP8
SO8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm
plastic small outline package; 8 leads;
body width 3.9 mm
Version
SOT505-1
SOT96-1
Type number
4. Marking
Table 5.
Marking codes
Marking code
5V07B
5V0L7BS
Type number
PESD5V0L7BAS
PESD5V0L7BS
PESD5V0L7BAS_BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 23 June 2010
2 of 15
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
s
t
p
= 8/20
s
[1]
[1]
Min
-
-
-
65
65
Max
35
2.5
150
+150
+150
Unit
W
A
C
C
C
Non-repetitive current pulse 8/20
s
exponentially decaying waveform according to IEC 61000-4-5;
see
Figure 1.
Table 7.
Symbol
V
ESD
ESD maximum ratings
Parameter
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883
(human body
model)
[1]
Min
-
-
Max
10
10
Unit
kV
kV
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Figure 2.
Table 8.
Standard
ESD standards compliance
Conditions
> 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD); see
Figure 2
MIL-STD-883; class 3 (human body model)
PESD5V0L7BAS_BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 23 June 2010
3 of 15
NXP Semiconductors
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
s
pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
C unless otherwise specified
Symbol
Per diode
V
RWM
I
RM
V
CL
V
BR
r
dif
C
d
reverse standoff voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
V
RWM
= 5 V; see
Figure 6
I
PP
= 1 A
I
PP
= 2.5 A
I
R
= 1 mA
I
R
= 1 mA
V
R
= 0 V; f = 1 MHz;
see
Figure 5
[1]
[1]
Parameter
Conditions
Min
-
-
-
-
7.2
-
-
Typ
-
3
-
-
7.6
-
8
Max
5
25
11
17
7.9
100
10
Unit
V
nA
V
V
V
pF
[1]
Non-repetitive current pulse 8/20
s
exponentially decaying waveform according to IEC 61000-4-5; see
Figure 1.
PESD5V0L7BAS_BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 23 June 2010
4 of 15
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