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TV04A430JB-HF

Description
TVS DIODE 5VWM 9.2VC SMA
CategoryDiscrete semiconductor    diode   
File Size122KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

TV04A430JB-HF Overview

TVS DIODE 5VWM 9.2VC SMA

TV04A430JB-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompli
ECCN codeEAR99
Breakdown voltage nominal value50.3 V
Maximum clamping voltage69.4 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage43 V
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
SMD Transient Voltage Suppressor
TV04A5V0-HF Thru. TV04A441-HF
Working Peak Reverse Voltage: 5.0 to 440 Volts
Power Dissipation: 400 Watts
RoHS Device
Halogen Free
Features
- Glass passivated chip.
- 400W peak pulse power capability with a 10/1000
µs waveform, repetitive rate (duty cycle):0.01%
- Low leakage.
- Uni and Bidirectional unit.
- Excellent clamping capability.
- Very fast response time.
- UL recognized file # E349157
-
Range:
TV04A5V0J(B) thru. TV04A240J(B)
R
SMA/DO-214AC
0.179(4.55)
0.161(4.10)
0.064(1.63)
0.048(1.23)
0.109(2.76)
0.099(2.51)
0.206(5.22)
0.192(4.87)
0.012(0.30)
0.006(0.15)
Mechanical data
- Epoxy: UL 94V-0 rate flame retardant.
- Case: SMA/DO-214AC, molded plastic.
- Terminals: solderable per MIL-STD-750,
method 2026.
- Polarity: Color band denotes cathode end
execpt bipolar.
- Weight: 0.069 gram (approx.)
0.089(2.26)
0.077(1.96)
0.059(1.51)
0.030(0.75)
0.008(0.20)
0.000(0.00)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
Characteristics
Peak power dissipation on 10/1000μS
waveform (Note1)
Peak pulse current on 10/1000μS
waveform (Note 1)
Steady state power dissipation at T
L
=75°C
Symbol
P
PP
Value
400
Units
W
I
PP
See Next Table
A
P
D
1.0
W
Peak forward surge current, 8.3mS single
half sine-wave unidirectional only (Note 2)
Maximum instantaneous forward voltage
at 25.0A for unidirectional only (Note 3)
Operating junction and storage temperature
I
FSM
40
A
V
F
T
J
, T
STG
3.5/5.0
-55 to +150
V
°C
Notes: 1. Non-repetitive current pulse, per Fig. 5 and derated above T
A
=25°C, per Fig. 1.
2. Measured on 8.3mS single half sine-wave or equare wave,duty cycle=4 pulses per minute maximum.
3. VF<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
Company reserves the right to improve product design , functions and reliability without notice.
QW-JTV01
REV:F
Page 1
Comchip Technology CO., LTD.
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