Dual Low-Power, Programmable Gain Buffer
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor(TI ) |
| Parts packaging code | DIP |
| package instruction | PLASTIC, DIP-8 |
| Contacts | 8 |
| Reach Compliance Code | unknow |
| Amplifier type | BUFFER |
| Nominal bandwidth (3dB) | 60 MHz |
| Maximum bias current (IIB) at 25C | 0.1 µA |
| Maximum input offset voltage | 8000 µV |
| JESD-30 code | R-PDIP-T8 |
| JESD-609 code | e0 |
| Nominal Negative Supply Voltage (Vsup) | -5 V |
| Number of functions | 2 |
| Number of terminals | 8 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP8,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | +-5 V |
| Certification status | Not Qualified |
| minimum slew rate | 250 V/us |
| Maximum slew rate | 9.8 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | BIPOLAR |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |