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CNY70_08

Description
Reflective Optical Sensor with Transistor Output
File Size145KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

CNY70_08 Overview

Reflective Optical Sensor with Transistor Output

CNY70
Vishay Semiconductors
Reflective Optical Sensor with Transistor Output
Description
The CNY70 is a reflective sensor that includes an
infrared emitter and phototransistor in a leaded pack-
age which blocks visible light.
Marking area
E
D
Features
Package type: Leaded
Detector type: Phototransistor
Dimensions: L 7 mm x W 7 mm x H 6 mm
e4
Peak operating distance: < 0.5 mm
Operating range: 0 mm to 4.5 mm
Typical output current under test: I
C
= 1 mA
Daylight blocking filter
Emitter wavelength 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity 4000 pcs in tubes,
80 pcs/tube
Top
view
19158
Applications
Optoelectronic scanning and switching devices i.e.,
index sensing, coded disk scanning etc. (optoelec-
tronic encoder assemblies).
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Coupler
Parameter
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
Distance to case 2 mm, t
5 s
Test condition
T
amb
25 °C
Symbol
P
tot
T
amb
T
stg
T
sd
Value
200
- 40 to + 85
- 40 to + 100
260
Unit
mW
°C
°C
°C
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
t
p
10 µs
T
amb
25°C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
Value
5
50
3
100
100
Unit
V
mA
A
mW
°C
Document Number 83751
Rev. 1.6, 04-Sep-06
www.vishay.com
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